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28F320B3 参数 Datasheet PDF下载

28F320B3图片预览
型号: 28F320B3
PDF下载: 下载PDF文件 查看货源
内容描述: 智能3高级启动块4-, 8-,16- , 32兆位闪存系列 [SMART 3 ADVANCED BOOT BLOCK 4-, 8-, 16-, 32-MBIT FLASH MEMORY FAMILY]
分类和应用: 闪存
文件页数/大小: 48 页 / 296 K
品牌: INTEL [ INTEL ]
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E
SMART 3 ADVANCED BOOT BLOCK  
Table 2. Smart 3 Advanced Boot Block Pin Descriptions (Continued)  
Symbol  
Type  
Name and Function  
VCCQ  
INPUT  
OUTPUT VCC: Enables all outputs to be driven to 1.8 V – 2.5 V while  
the VCC is at 2.7 V–3.3 V. If the VCC is regulated to 2.7 V–2.85 V, VCCQ  
can be driven at 1.65 V–2.5 V to achieve lowest power operation (see  
Section 4.4, DC Characteristics.  
This input may be tied directly to VCC (2.7 V–3.6 V).  
VCC  
VPP  
DEVICE POWER SUPPLY: 2.7 V–3.6 V  
PROGRAM/ERASE POWER SUPPLY: Supplies power for program  
and erase operations. VPP may be the same as VCC (2.7 V–3.6 V) for  
single supply voltage operation. For fast programming at manufacturing,  
11.4 V–12.6 V may be supplied to VPP. This pin cannot be left floating.  
Applying 11.4 V–12.6 V to VPP can only be done for a maximum of 1000  
cycles on the main blocks and 2500 cycles on the parameter blocks.  
VPP may be connected to 12 V for a total of 80 hours maximum (see  
Section 3.4 for details).  
VPP < VPPLK protects memory contents against inadvertent or  
unintended program and erase commands.  
GND  
NC  
GROUND: For all internal circuitry. All ground inputs must be  
connected.  
NO CONNECT: Pin may be driven or left floating.  
2.2.2  
MAIN BLOCKS  
2.2  
Block Organization  
After the parameter blocks, the remainder of the  
array is divided into equal size main blocks (65,536  
bytes / 32,768 words) for data or code storage. The  
4-Mbit device contains seven main blocks; 8-Mbit  
device contains fifteen main blocks; 16-Mbit flash  
has thirty-one main blocks; 32-Mbit has sixty-three  
main blocks.  
The Smart  
3
Advanced Boot Block is an  
asymmetrically-blocked architecture that enables  
system integration of code and data within a single  
flash device. Each block can be erased  
independently of the others up to 100,000 times.  
For the address locations of each block, see the  
memory maps in Appendix D.  
3.0 PRINCIPLES OF OPERATION  
2.2.1  
PARAMETER BLOCKS  
Flash memory combines EEPROM functionality  
with in-circuit electrical program and erase  
capability. The Smart 3 Advanced Boot Block flash  
memory family utilizes a Command User Interface  
(CUI) and automated algorithms to simplify program  
and erase operations. The CUI allows for 100%  
CMOS-level control inputs and fixed power supplies  
during erasure and programming.  
The Smart 3 Advanced Boot Block flash memory  
architecture includes parameter blocks to facilitate  
storage of frequently updated small parameters  
(e.g., data that would normally be stored in an  
EEPROM). By using software techniques, the word-  
rewrite functionality of EEPROMs can be emulated.  
Each device contains eight parameter blocks of  
8-Kbytes/4-Kwords (8192 bytes/4,096 words) each.  
11  
PRELIMINARY