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XC836 参数 Datasheet PDF下载

XC836图片预览
型号: XC836
PDF下载: 下载PDF文件 查看货源
内容描述: 8位单芯片微控制器 [8-Bit Single-Chip Microcontroller]
分类和应用: 微控制器
文件页数/大小: 56 页 / 1355 K
品牌: INFINEON [ Infineon ]
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XC835/836  
Electrical Parameters  
3.2.5  
Power Supply Current  
Table 15 provides the characteristics of the power supply current in the XC835/836.  
Table 15  
Power Consumption Parameters1) 2)(Operating Conditions apply)  
Parameter  
Symbol  
Limit Values  
Typ. Max.  
28  
Unit Test Condition  
Active Mode  
IDDPA  
23  
16  
mA  
mA  
mA  
mA  
mA  
µA  
µA  
µA  
µA  
µA  
µA  
µA  
µA  
5 V / 3.3 V 3)  
5 V / 3.3 V 4)  
2.5 V5)  
20  
5
Idle Mode  
IDDPI  
IPDP1  
IPDP2  
IPDP3  
IPDP4  
18  
25  
5
5 V / 3.3 V 6)  
2.5 V 5)  
Power Down Mode 1  
Power Down Mode 2  
Power Down Mode 3  
Power Down Mode 4  
3
5
TA = 25° C7)  
TA = 85° C7)8)9)  
TA = 25° C7)8)  
TA = 85° C7)8)9)  
TA = 25° C7)8)  
TA = 85° C7)8)9)  
TA = 25° C7)  
TA = 85° C7)8)9)  
6
28  
8
5
31  
7
5
30  
7
30  
1) The typical IDDP values are measured at TA = + 25 °C and VDDP = 5 V and 3.3 V.  
2) The maximum IDDC values are measured under worst case conditions (TA = + 125 °C and VDDC = 5 V).  
3) IDDP (active mode) is measured with: CPU clock and input clock to all peripherals running at 24 MHz  
(CLKMODE=0).  
4) IDDP (active mode) is measured with: CPU clock and input clock to all peripherals running at 8 MHz  
(CLKMODE=1).  
5) This value is based on the maximum load capacity of EVR during VDDP = 2.5 V. Not subject to production test,  
verified by design/characterisation.  
6) IDDPI (idle mode) is measured with: CPU clock disabled, watchdog timer disabled, input clock to all peripherals  
enabled and running at 24 MHz (CLKMODE=0).  
7) IPDP1, IPDP2, IPDP3 and IPDP4 is measured at 5 V and 3.3 V with: wake-up port is programmed to be input with  
either internal pull devices enabled or driven externally to ensure no floating inputs.  
8) Not subject to production test, verified by design/characterisation.  
9) IPDP1, IPDP2, IPDP3 and IPDP4 has a maximum values of 120 uA at TA = + 125 °C.  
Data Sheet  
35  
V1.2, 2011-03  
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