TLE9879QXA40
Electrical Characteristics
29.12
MOSFET Driver
29.12.1 Electrical Characteristics
Table 40
Electrical Characteristics MOSFET Driver
VS = 5.5 V to 28 V, Tj = -40 °C to +150 °C, all voltages with respect to ground, positive current flowing into pin
(unless otherwise specified)
Parameter
Symbol
Values
Unit Note / Test Condition
Number
Min. Typ. Max.
MOSFET Driver Output
Source current - Charge
current (low gate voltage)
ISoumax
200
250 420
250 420
mA
mA
V
I
SD > 8 V, CLoad = 10 nF, P_12.1.44
SOU = CLoad * slew rate, ( =
(20%-50%) / tSLEW),
CHARGE = IDISCHG
31(max)
SD > 8 V, CLoad = 10 nF, P_12.1.45
SOU = CLoad * slew rate, ( =
(50%-20%) / tSLEW),
CHARGE = IDISCHG
31(max)
I
=
Sink current - Discharge
current
ISinkmax
200
V
I
I
=
High level output voltage
Gxx vs. Sxx
VGxx1
VGxx2
VGxx3
VGxx6
VGxx7
trise3_3nf
10
8
–
14
–
V
V
V
V
V
ns
V
V
SD > 8V1), CLoad = 10 nF P_12.1.3
High level output voltage
GHx vs. SHx
–
SD = 6.4 V1)2), CLoad = 10 P_12.1.4
nF
High level output voltage
GHx vs. SHx
7
–
–
V
nF
SD = 5.4 V1), CLoad = 10
P_12.1.5
High level output voltage
GLx vs. GND
8
–
–
V
SD = 6.4 V1)2), CLoad = 10 P_12.1.6
nF
High level output voltage
GLx vs. GND
7
–
–
V
nF
SD = 5.4 V1), CLoad = 10
P_12.1.7
Rise time
Fall time
Rise time
–
200
–
2)CLoad = 3.3 nF,
V
25-75%, ICHARGE = IDISCHG
= 31(max)
2)CLoad = 3.3 nF,
V
75-25%, ICHARGE = IDISCHG
= 31(max)
P_12.1.8
SD > 8 V,
tfall3_3nf
–
200
–
ns
ns
P_12.1.9
SD > 8 V,
trisemax
100
250 450
C
Load = 10 nF,
P_12.1.57
V
SD > 8 V,
25-75%, ICHARGE = IDISCHG
= 31(max)
Data Sheet
113
Rev. 1.0, 2015-04-30
INFINEON [ Infineon ]
