TC1796
Package and Reliability
5.3
Flash Memory Parameters
The data retention time of the TC1796’s Flash memory (i.e. the time after which stored
data can still be retrieved) depends on the number of times the Flash memory has been
erased and programmed.
Table 36
Parameter
Flash Parameters
Symbol
Values
Typ. Max.
Unit Note /
Test Condition
Min.
Program / Data Flash tRET CC 20
–
–
–
–
–
years Max. 1000
Retention Time,
erase/program
Physical Sector1)2)
cycles
Program / Data Flash tRETL CC 20
–
–
years Max. 100
Retention Time
erase/program
Logical Sector1)2)
cycles
Data Flash
Endurance
(128 KB)
NE CC 15 000
–
–
Max.dataretention
time 5 years
Data Flash
NE8 CC 120 000 –
Max.dataretention
time 5 years
Endurance,
EEPROM Emulation
(8 × 16 KB)
Programming Time
tPR CC –
tERP CC –
–
–
5
5
ms
s
–
per Page3)
Program Flash
Erase Time
per 256-KB Sector
f
CPU = 150 MHz
CPU = 150 MHz
Data Flash
tERD CC –
–
–
2.5
–
s
f
Erase Time
per 64-KB Sector
Wake-up time
tWU CC 4300 ×
1/fCPU
–
–
+ 40µs
1) Storage and inactive time included.
2) At average weighted junction temperature Tj = 100oC, or
the retention time at average weighted temperature of Tj = 110oC is minimum 10 years, or
the retention time at average weighted temperature of Tj = 150oC is minimum 0.7 years.
3) In case the Program Verify feature detects weak bits, these bits will be programmed once more. The
reprogramming takes additional 5 ms.
Data Sheet
132
V1.0, 2008-04
INFINEON [ Infineon ]
