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SAK-TC399XP-256F300S BC 参数 Datasheet PDF下载

SAK-TC399XP-256F300S BC图片预览
型号: SAK-TC399XP-256F300S BC
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内容描述: [Infineon releases its second generation AURIX microcontroller in embedded flash 40 nm technology. It comes back with an increase in performance, memory sizes, connectivity and more scalability to address the new automotive trends and challenges. This family has more than 20 products to provide the most scalable portfolio of safety microcontrol­ler. In terms of performance, the highest end product TC39x offers 6 cores running at 300 MHz and up to 6.9 MBytes embedded RAM, and consuming below 2 W. ]
分类和应用:
文件页数/大小: 548 页 / 21256 K
品牌: INFINEON [ Infineon ]
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TC39x BC/BD-Step  
Electrical SpecificationPower Supply Current  
Table 3-27 Current Consumption (cont’d)  
Parameter  
Symbol  
Values  
Typ.  
Unit  
Note / Test Condition  
Min.  
Max.  
∑ Sum of all currents (incl.  
I
DDTOT CC  
-
-
-
-
1536  
mA  
mA  
mA  
real power pattern;  
TJ=150°C  
I
EXTRAIL+IDDMRAIL+IDDx3RAIL+IDD)  
-
-
1720  
980  
real power pattern;  
TJ=160°C  
∑ Sum of all currents with DC- IDDTOTDC3  
DC EVRC regulator active  
real power pattern;  
EVRC reset settings  
with 72% efficiency;  
6)  
CC  
VEXT = 3.3V; TJ=160°C  
∑ Sum of all currents with DC- IDDTOTDC5  
-
-
-
-
670  
38  
mA  
mA  
real power pattern;  
EVRC reset settings  
with 72% efficiency;  
6)  
DC EVRC regulator active  
CC  
VEXT = 5V; TJ=160°C  
∑ Sum of all currents (SLEEP  
mode) 1)  
I
I
SLEEP CC  
All CPUs in idle, All  
peripherals in sleep,  
fSRI/SPB = 1 MHz via  
LPDIV divider; TJ =  
25°C  
∑ Sum of all currents  
STANDBY CC -  
-
130 8)  
µA  
32 kB Standby RAM  
block active. SCR  
inactive. Power to  
(STANDBY mode) drawn at  
V
EVRSB supply pin 7)  
remaining domains  
switched off. TJ = 25°C;  
VEVRSB = 5V  
Maximum power dissipation 9)  
PD SR  
-
-
-
-
-
-
2240  
3220  
2500  
mW  
mW  
mW  
ADAS power pattern;  
TJ=125°C  
max power pattern;  
TJ=150°C  
real power pattern;  
TJ=150°C  
1) Limits are defined for real power pattern (VDD=1.275V). For max power pattern limit has to be multiplied by the factor 1.22.  
2) Realistic Pflash read pattern with 50% Pflash bandwidth utlilization and a code mix of 50% 0s and 50% 1s. A common  
decoupling capacitor of atleast 100nF for (VDDP3) is used. Continuous Dflash programming in burst mode with 3.3 V supply and  
realistic Pflash read access in parallel. Erase currents of the corresponding flash modules are less than the respective  
programming currents at VDDP3 pin. Programming and erasing flash may generate transient current spikes of up to 45 mA / 20  
ns  
which are handled by the decoupling and buffer capacitors. This parameter is relevant for external power supply dimensioning  
and not for thermal considerations.  
3) Limits are defined for real power pattern. For ADAS power pattern limit sum up to 40mA.  
4) The current consumption includes only minimal port activity.  
5) Limits are defined for real power pattern. For ADAS power pattern limit has to be multiplied by the factor 0.7.  
6) The total current drawn from external regulator is estimated with 72% EVRC SMPS regulator efficiency. IDDTOTDCx is  
calculated from IDDTOT using the scaled core current [(IDD x VDD)/(VinxEfficiency)] and constitutes all other rail currents and  
IDDM.  
7) The same current limits apply also for the other power pattern.  
Data Sheet  
448  
V 1.2, 2021-03  
OPEN MARKET VERSION  
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