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S29GL128P90TFIR10 参数 Datasheet PDF下载

S29GL128P90TFIR10图片预览
型号: S29GL128P90TFIR10
PDF下载: 下载PDF文件 查看货源
内容描述: [High Performance Page Mode]
分类和应用: PC光电二极管内存集成电路闪存
文件页数/大小: 82 页 / 904 K
品牌: INFINEON [ Infineon ]
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S29GL01GP  
S29GL512P  
S29GL256P  
S29GL128P  
Figure 7.3 Sector Erase Operation  
Write Unlock Cycles:  
Address 555h, Data AAh  
Address 2AAh, Data 55h  
Unlock Cycle 1  
Unlock Cycle 2  
Write Sector Erase Cycles:  
Address 555h, Data 80h  
Address 555h, Data AAh  
Address 2AAh, Data 55h  
Sector Address, Data 30h  
Command Cycle 1  
Command Cycle 2  
Command Cycle 3  
Specify first sector for erasure  
Select  
Additional  
Sectors?  
No  
Yes  
Write Additional  
Sector Addresses  
• Each additional cycle must be written within tSEA timeout  
• The host system may monitor DQ3 or wait tSEA to ensure  
acceptance of erase commands  
• No limit on number of sectors  
Yes  
Last Sector  
Selected?  
No  
• Commands other than Erase Suspend or selecting additional  
sectors for erasure during timeout reset device to reading array  
data  
Poll DQ3.  
DQ3 = 1?  
No  
Yes  
Perform Write Operation  
Status Algorithm  
(see Figure 7.4)  
Status may be obtained by reading DQ7, DQ6 and/or DQ2.  
Yes  
Done?  
No  
No  
Error condition (Exceeded Timing Limits)  
DQ5 = 1?  
Yes  
PASS. Device returns  
to reading array.  
FAIL. Write reset command  
to return to reading array.  
Notes  
1. See Table on page 65 for erase command sequence.  
2. See DQ3: Sector Erase Timeout State Indicator on page 35 for information on the sector erase timeout.  
Document Number: 002-00886 Rev. *B  
Page 26 of 83  
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