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S29GL128P90TFIR10 参数 Datasheet PDF下载

S29GL128P90TFIR10图片预览
型号: S29GL128P90TFIR10
PDF下载: 下载PDF文件 查看货源
内容描述: [High Performance Page Mode]
分类和应用: PC光电二极管内存集成电路闪存
文件页数/大小: 82 页 / 904 K
品牌: INFINEON [ Infineon ]
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S29GL01GP  
S29GL512P  
S29GL256P  
S29GL128P  
Write buffer programming is allowed in any sequence of memory (or address) locations. These flash devices are capable of handling  
multiple write buffer programming operations on the same write buffer address range without intervening erases.  
Use of the write buffer is strongly recommended for programming when multiple words are to be programmed.  
Software Functions and Sample Code  
Write Buffer Program  
(LLD Functions Used = lld_WriteToBufferCmd, lld_ProgramBufferToFlashCmd)  
Cycle  
Description  
Unlock  
Operation Byte Address Word Address  
Data  
00AAh  
1
2
3
4
Write  
Write  
Write  
Write  
Base + AAAh  
Base + 555h  
Base + 555h  
Base + 2AAh  
Unlock  
0055h  
Write Buffer Load Command  
Write Word Count  
Sector Address  
Sector Address  
0025h  
Word Count (N–1)h  
Number of words (N) loaded into the write buffer can be from 1 to 32 words (1 to 64 bytes).  
5 to 36  
Last  
Load Buffer Word N  
Write Buffer to Flash  
Write  
Write  
Program Address, Word N  
Sector Address  
Word N  
0029h  
Notes  
1. Base = Base Address.  
2. Last = Last cycle of write buffer program operation; depending on number of words written, the total number of cycles may be from 6 to 37.  
3. For maximum efficiency, it is recommended that the write buffer be loaded with the highest number of words (N words) possible.  
The following is a C source code example of using the write buffer program function. Refer to the Cypress Low Level Driver User’s  
Guide (available on www.cypress.com) for general information on Cypress Flash memory software development guidelines.  
/* Example: Write Buffer Programming Command  
*/  
/* NOTES: Write buffer programming limited to 16 words. */  
/*  
/*  
/*  
/*  
All addresses to be written to the flash in  
one operation must be within the same flash  
page. A flash page begins at addresses  
evenly divisible by 0x20.  
*/  
*/  
*/  
*/  
UINT16 *src = source_of_data;  
/* address of source data  
/* flash destination address  
/* word count (minus 1)  
/* write unlock cycle 1  
/* write unlock cycle 2  
*/  
*/  
UINT16 *dst = destination_of_data;  
UINT16 wc  
= words_to_program -1;  
*/  
*/  
*/  
*( (UINT16 *)base_addr + 0x555 ) = 0x00AA;  
*( (UINT16 *)base_addr + 0x2AA ) = 0x0055;  
*( (UINT16 *)sector_address )  
*( (UINT16 *)sector_address )  
= 0x0025;  
= wc;  
/* write write buffer load command */  
/* write word count (minus 1) */  
for (i=0;i<=wc;i++)  
{
*dst++ = *src++; /* ALL dst MUST BE in same Write Buffer */  
}
*( (UINT16 *)sector_address )  
/* poll for completion */  
= 0x0029;  
/* write confirm command  
*/  
/* Example: Write Buffer Abort Reset */  
*( (UINT16 *)addr + 0x555 ) = 0x00AA;  
*( (UINT16 *)addr + 0x2AA ) = 0x0055;  
*( (UINT16 *)addr + 0x555 ) = 0x00F0;  
/* write unlock cycle 1  
/* write unlock cycle 2  
/* write buffer abort reset  
*/  
*/  
*/  
Document Number: 002-00886 Rev. *B  
Page 23 of 83  
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