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PEB2086N 参数 Datasheet PDF下载

PEB2086N图片预览
型号: PEB2086N
PDF下载: 下载PDF文件 查看货源
内容描述: ISDN SubscribernAccess控制器 [ISDN SubscribernAccess Controller]
分类和应用: 数字传输接口电信集成电路电信电路综合业务数字网控制器
文件页数/大小: 320 页 / 1450 K
品牌: INFINEON [ Infineon ]
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Functional Description  
Table 5  
TEM/PFS Function Table  
TEM  
PFS  
Effect  
0
0
1
1
0
1
1
0
No pre-filter (0 delay)  
Pre-filter delay compensation 520 ns  
Pre-filter delay compensation 910 ns  
Test mode (layer-1 disabled)  
This delay compensation might be necessary in order to comply with the "total phase deviation  
input to output" requirement of CCITT recommendation I.430 which specifies a phase  
deviation in the range of – 7% to + 15% of a bit period.  
2.5.3.2 External Protection Circuitry  
The CCITT specification for both transmitter and receiver impedances in TEs results in a  
conflict with respect to external S -protection circuitry requirements:  
0
To avoid destruction or malfunctioning of the S -device it is desirable to drain off even small  
0
overvoltages reliably.  
To meet the 96 kHz impedance test specified for transmitters and receivers (for TEs only,  
CCITT sections 8.5.1.2a and 8.6.1.1) the protection circuit must be dimensioned such that  
voltages below 2.4 V are not affected (1.2 V CCITT amplitude x transformer ratio 1:2).  
This requirement results from the fact that this test is to be performed with no supply voltage  
being connected to the TE. Therefore the second reference point for overvoltages VDD, is  
tied to GND. Then, if the amplitude of the 96 kHz test signal is greater than the combined  
forward voltages of the diodes, a current exceeding the specified one may pass the  
protection circuit.  
The following recommendations aim at achieving the highest possible device protection  
against overvoltages while still fulfilling the 96 kHz impedance tests.  
Depending on transformer and circuit layout, it may become necessary to rise the threshold  
voltage slightly.  
If the device is not used in TE applications, the Zener diodes should be replaced by standard  
diodes.  
Semiconductor Group  
85