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IRL7472L1 参数 Datasheet PDF下载

IRL7472L1图片预览
型号: IRL7472L1
PDF下载: 下载PDF文件 查看货源
内容描述: [The StrongIRFET™ power MOSFET family is optimized for low RDS(on) and high current capability. The devices are ideal for low frequency applications requiring performance and ruggedness. The comprehensive portfolio addresses a broad range of applications including DC motors, battery management systems, inverters, and DC-DC converters. ]
分类和应用:
文件页数/大小: 12 页 / 527 K
品牌: INFINEON [ Infineon ]
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IRL7472L1TRPbF  
10000  
1000  
100  
10  
OPERATION IN THIS AREA  
LIMITED BY R (on)  
DS  
1000  
100  
10  
100µsec  
T
= 175°C  
T
= 25°C  
J
J
1msec  
Limited by Package  
10msec  
DC  
1
Tc = 25°C  
Tj = 175°C  
Single Pulse  
V
= 0V  
1.4  
GS  
1.0  
0.1  
0.2  
0.4  
V
0.6  
0.8  
1.0  
1.2  
1.6  
0.1  
1
10  
, Source-to-Drain Voltage (V)  
V
, Drain-to-Source Voltage (V)  
SD  
DS  
Fig 10. Maximum Safe Operating Area  
Fig 9. Typical Source-Drain Diode Forward Voltage  
2.0  
1.8  
1.6  
1.4  
1.2  
1.0  
0.8  
0.6  
0.4  
0.2  
0.0  
50  
Id = 5.0mA  
49  
48  
47  
46  
45  
44  
43  
42  
41  
-5  
0
5
10 15 20 25 30 35 40  
-60  
-20  
20  
60  
100  
140  
180  
T
, Temperature ( °C )  
J
V
Drain-to-Source Voltage (V)  
DS,  
Fig 11. Drain-to-Source Breakdown Voltage  
Fig 12. Typical Coss Stored Energy  
1.8  
Vgs = 3.5V  
1.6  
1.4  
1.2  
1.0  
0.8  
0.6  
0.4  
0.2  
0.0  
Vgs = 4.0V  
Vgs = 4.5V  
Vgs = 5.5V  
Vgs = 6.0V  
Vgs = 8.0V  
Vgs = 10V  
0
20 40 60 80 100 120 140 160 180 200  
, Drain Current (A)  
I
D
Fig 13. Typical On-Resistance vs. Drain Current  
5
2016-10-14  
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