IRL7472L1TRPbF
10000
1000
100
10
10000
1000
100
10
VGS
15V
10V
6.0V
5.0V
4.5V
4.0V
3.5V
3.0V
VGS
15V
10V
6.0V
5.0V
4.5V
4.0V
3.5V
3.0V
TOP
TOP
BOTTOM
BOTTOM
3.0V
3.0V
60µs PULSE WIDTH
Tj = 175°C
60µs PULSE WIDTH
Tj = 25°C
1
1
0.01
0.1
1
10
100
0.01
0.1
1
10
100
V
, Drain-to-Source Voltage (V)
DS
V
, Drain-to-Source Voltage (V)
DS
Fig 3. Typical Output Characteristics
Fig 4. Typical Output Characteristics
10000
1000
100
10
2.0
1.7
1.4
1.1
0.8
0.5
I
= 195A
= 10V
D
V
GS
T
= 175°C
T
= 25°C
J
J
V
= 10V
DS
60µs PULSE WIDTH
1.0
1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0
-60 -40 -20 0 20 40 60 80 100120140160180
, Junction Temperature (°C)
T
J
V
, Gate-to-Source Voltage (V)
GS
Fig 6. Normalized On-Resistance vs. Temperature
Fig 5. Typical Transfer Characteristics
100000
10000
1000
14
V
C
= 0V,
f = 10 KHZ
GS
I
= 195A
= C + C , C SHORTED
D
iss
gs
gd ds
C
= C
12
10
8
rss
gd
V
V
= 32V
= 20V
DS
DS
C
= C + C
oss
ds
gd
C
iss
C
oss
6
C
rss
4
2
0
1
10
100
0
60 120 180 240 300 360 420 480 540 600
, Total Gate Charge (nC)
V
, Drain-to-Source Voltage (V)
DS
Q
G
Fig 7. Typical Capacitance vs. Drain-to-Source Voltage
Fig 8. Typical Gate Charge vs. Gate-to-Source Voltage
4
2016-10-14
INFINEON [ Infineon ]
