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IRL7472L1 参数 Datasheet PDF下载

IRL7472L1图片预览
型号: IRL7472L1
PDF下载: 下载PDF文件 查看货源
内容描述: [The StrongIRFET™ power MOSFET family is optimized for low RDS(on) and high current capability. The devices are ideal for low frequency applications requiring performance and ruggedness. The comprehensive portfolio addresses a broad range of applications including DC motors, battery management systems, inverters, and DC-DC converters. ]
分类和应用:
文件页数/大小: 12 页 / 527 K
品牌: INFINEON [ Infineon ]
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IRL7472L1TRPbF  
Absolute Maximum Ratings  
Symbol  
Parameter  
Max.  
645  
456  
68  
Units  
ID @ TC = 25°C  
Continuous Drain Current, VGS @ 10V (Silicon Limited)   
ID @ TC = 100°C Continuous Drain Current, VGS @ 10V (Silicon Limited)   
ID @ TA = 25°C Continuous Drain Current, VGS @ 10V (Silicon Limited)   
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V (Package Limited)  
A
375  
1500  
IDM  
Pulsed Drain Current   
Maximum Power Dissipation  
Maximum Power Dissipation  
Linear Derating Factor  
A
PD @TC = 25°C  
PD @TA = 25°C  
341  
W
3.8  
0.025  
W/°C  
V
Gate-to-Source Voltage  
Operating Junction and  
± 20  
VGS  
TJ  
-55 to + 175  
°C  
Storage Temperature Range  
TSTG  
Avalanche Characteristics  
EAS (Thermally limited)  
308  
765  
Single Pulse Avalanche Energy   
Single Pulse Avalanche Energy   
Avalanche Current   
mJ  
EAS (Thermally limited)  
IAR  
A
mJ  
See Fig.15,16, 23a, 23b  
EAR  
Repetitive Avalanche Energy   
Thermal Resistance  
Symbol  
Parameter  
Typ.  
–––  
12.5  
20  
Max.  
40  
Units  
Junction-to-Ambient   
RJA  
Junction-to-Ambient   
Junction-to-Ambient   
Junction-to-Case   
Junction-to-PCB Mounted  
–––  
–––  
0.44  
–––  
RJA  
°C/W  
RJA  
RJC  
RJA-PCB  
–––  
1.0  
Static @ TJ = 25°C (unless otherwise specified)  
Symbol  
V(BR)DSS  
Parameter  
Min. Typ. Max. Units  
Conditions  
VGS = 0V, ID = 250µA  
Drain-to-Source Breakdown Voltage  
Breakdown Voltage Temp. Coefficient  
Static Drain-to-Source On-Resistance  
40  
––– –––  
V
–––  
30 ––– mV/°C Reference to 25°C, ID = 5.0mA  
V(BR)DSS/TJ  
RDS(on)  
––– 0.34 0.45  
––– 0.52 0.70  
VGS = 10V, ID = 195A  
m  
V
GS = 4.5V, ID = 98A  
VGS(th)  
IDSS  
Gate Threshold Voltage  
1.0  
1.7 2.5  
V
VDS = VGS, ID = 250µA  
––– ––– 1.0  
––– ––– 150  
––– ––– 100  
––– ––– -100  
––– 1.0 –––  
VDS = 40V, VGS = 0V  
Drain-to-Source Leakage Current  
µA  
VDS = 40V, VGS = 0V, TJ = 125°C  
IGSS  
Gate-to-Source Forward Leakage  
Gate-to-Source Reverse Leakage  
Internal Gate Resistance  
VGS = 20V  
GS = -20V  
nA  
V
RG  
Notes:  
Mounted on minimum footprint full size board with metalized  
back and with small clip heatsink.  
TC measured with thermocouple mounted to top (Drain) of part.  
Used double sided cooling , mounting pad with large heatsink.  
Mounted to a PCB with small clip  
heatsink (still air)  
Mounted on minimum footprint full size  
board with metalized back and with  
small clip heatsink (still air)  
Surface mounted on 1 in. square Cu  
board (still air).  
2
2016-10-14  
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