BTS 712 N1
Typ. on-state resistance
Typ. ground pin operating current
R
= f (V ,T ); I = 1.8 A, IN = high
I
= f (V ,T ); V = high (one channel on)
ON
L
GND
IN
bb j
bb j
R
[mOhm]
I
[mA]
ON
GND
500
450
400
350
300
250
200
150
100
50
1.5
1.25
1
Tj = 150°C
85°C
0.75
0.5
0.25
0
Tj = -40°C
25°C
85°C
150°C
25°C
-40°C
0
0
10
20
30
40
50
0
10
20
30
40
V
bb
[V]
V
bb
[V]
Typ. standby current
Typ. initial short circuit shutdown time
I
= f (T ); V = 9...34 V, IN
= low
t
= f (T
); V =12 V
bb
1...4
bb(off)
j
bb
off(SC)
j,start
t
[msec]
I
[µA]
off(SC)
6
bb(off)
250
5
4
3
2
1
200
150
100
50
0
0
-50
0
50
100
150
200
T [°C]
-50
0
50
100
150
200
[°C]
j
T
j,start
I
includes four times the current I
of the open
L(off)
bb(off)
load detection current sources.
Semiconductor Group
10