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IC42S16100-6TI 参数 Datasheet PDF下载

IC42S16100-6TI图片预览
型号: IC42S16100-6TI
PDF下载: 下载PDF文件 查看货源
内容描述: 512K ×16位×2组( 16兆位)同步动态RAM [512K x 16 Bits x 2 Banks (16-MBIT) SYNCHRONOUS DYNAMIC RAM]
分类和应用:
文件页数/大小: 78 页 / 802 K
品牌: ICSI [ INTEGRATED CIRCUIT SOLUTION INC ]
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IC42S16100  
Burst Read  
The read cycle is started by executing the read command.  
The address provided during read command execution is  
used as the starting address. First, the data corresponding  
to this address is output in synchronization with the clock  
signal after theCASlatency period. Next, data corresponding  
to an address generated automatically by the device is  
output in synchronization with the clock signal.  
is a full page is an exception. In this case the output buffers  
must be set to the high impedance state by executing a  
burst stop command.  
Note that upper byte and lower byte output data can be  
masked independently under control of the signals applied  
to the U/LDQM pins. The delay period (tQMD) is fixed at two,  
regardless of the CAS latency setting, when this function  
is used.  
The output buffers go to the LOW impedance state CAS  
latency minus one cycle after the read command, and go  
to the HIGH impedance state automatically after the last  
data is output. However, the case where the burst length  
The selected bank must be set to the active state before  
executing this command.  
CLK  
COMMAND  
UDQM  
READ A0  
t
QMD=2  
LDQM  
I/O8-I/O15  
I/O0-I/O 7  
D
OUT A0  
D
OUT A2  
DOUT A3  
HI-Z  
HI-Z  
DOUT A0  
D
OUT A1  
HI-Z  
READ (CA=A, BANK 0)  
DATA MASK (LOWER BYTE)  
DATA MASK (UPPER BYTE)  
CAS latency = 2, burst length = 4  
Burst Write  
The write cycle is started by executing the command. The  
address provided during write command execution is used  
as the starting address, and at the same time, data for this  
address is input in synchronization with the clock signal.  
regardless of the CAS latency setting. However, a wait  
period (write recovery: tDPL) after the last data input is  
required for the device to complete the write operation.  
Note that the upper byte and lower byte input data can be  
masked independently under control of the signals applied  
to the U/LDQM pins. The delay period (tDMD) is fixed at  
zero, regardless of the CAS latency setting, when this  
function is used.  
Next, data is input in other in synchronization with the clock  
signal. During this operation, data is written to address  
generatedautomaticallybythedevice. Thiscycleterminates  
automatically after a number of clock cycles determined by  
the stipulated burst length. However, the case where the  
burst length is a full page is an exception. In this case the  
write cycle must be terminated by executing a burst stop  
command. The latency for I/O pin data input is zero,  
The selected bank must be set to the active state before  
executing this command.  
CLK  
COMMAND  
I/O  
WRITE  
DIN  
0
DIN  
1
DIN  
2
DIN 3  
BURST LENGTH  
CAS latency = 2,3, burst length = 4  
24  
Integrated Circuit Solution Inc.  
DR024-0D 06/25/2004  
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