IBMN312164CT3
IBMN312804CT3
IBMN312404CT3
Preliminary
128Mb Synchronous DRAM - Die Revision B
DC Electrical Characteristics (TA = 0 to +70°C, V = 3.3V ±0.3V)
DD
Symbol
Parameter
Min.
-1
Max.
+1
Units
Notes
1
Input Leakage Current, any input
(0.0V £ VIN £ VDD), All Other Pins Not Under Test = 0V
II(L)
mA
Output Leakage Current
(DOUT is disabled, 0.0V £ VOUT £ VDDQ
IO(L)
VOH
VOL
-1
2.4
—
+1
—
mA
V
1
)
Output Level (LVTTL)
Output “H” Level Voltage (IOUT = -2.0mA)
Output Level (LVTTL)
Output “L” Level Voltage (IOUT = +2.0mA)
0.4
V
1. Multiply given planar values by 2 for 2-High stacked device.
DC Output Load Circuit
3.3 V
1200W
VOH (DC) = 2.4V, IOH = -2mA
VOL (DC) = 0.4V, IOL = 2mA
Output
50pF
870W
©IBM Corporation. All rights reserved.
06K7582.H03335A
01/01
Use is further subject to the provisions at the end of this document.
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