IBMN312164CT3
IBMN312404CT3
IBMN312804CT3
128Mb Synchronous DRAM - Die Revision B
Preliminary
Absolute Maximum Ratings
Symbol
VDD
Parameter
Power Supply Voltage
Rating
-0.3 to +4.6
-0.3 to +4.6
-0.3 to VDD+0.3
-0.3 to VDD+0.3
0 to +70
Units
V
Notes
1
1
1
1
1
1
1
1
VDDQ
VIN
VOUT
TA
Power Supply Voltage for Output
Input Voltage
V
V
Output Voltage
V
Operating Temperature (ambient)
Storage Temperature
Power Dissipation
°C
°C
W
TSTG
PD
-55 to +125
1.0
IOUT
Short Circuit Output Current
50
mA
1. Stresses greater than those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. This is a
stress rating only and functional operation of the device at these or any other conditions above those indicated in the operational
sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect reli-
ability.
Recommended DC Operating Conditions (T = 0°C to 70°C)
A
Rating
Symbol
Parameter
Units
Notes
Min.
3.0
Typ.
3.3
3.3
—
Max.
3.6
VDD
VDDQ
VIH
Supply Voltage
V
V
V
V
1
Supply Voltage for Output
Input High Voltage
3.0
3.6
1
2.0
VDD + 0.3
0.8
1, 2
1, 3
VIL
Input Low Voltage
-0.3
—
1. All voltages referenced to VSS and VSSQ
.
2. VIH (max) = VDD + 1.2V for pulse width £ 5ns.
3. VIL (min) = VSS - 1.2V for pulse width £ 5ns.
Capacitance (T = 25°C, f = 1MHz, V = 3.3V ± 0.3V)
A
DD
Symbol
Parameter
Min.
Typ
3.0
2.8
4.5
Max.
Units
Notes
Input Capacitance (A0-A11, BS0, BS1, CS, RAS, CAS, WE, CKE, DQM)
Input Capacitance (CK)
2.5
2.5
4.0
3.8
3.5
6.5
pF
pF
pF
1
1
1
CI
CO
Output Capacitance (DQ0 - DQ15)
1. Multiply given planar values by 2 for 2-High stacked device except CS and CKE.
©IBM Corporation. All rights reserved.
06K7582.H03335A
01/01
Use is further subject to the provisions at the end of this document.
Page 34 of 66
IBM [ IBM ]
