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IBM25PPC750GXECB5H83T 参数 Datasheet PDF下载

IBM25PPC750GXECB5H83T图片预览
型号: IBM25PPC750GXECB5H83T
PDF下载: 下载PDF文件 查看货源
内容描述: [RISC Microprocessor, 32-Bit, 933MHz, CMOS, CBGA292, 21 X 21 MM, 1 MM PITCH, CERAMIC, BGA-292]
分类和应用: 时钟外围集成电路
文件页数/大小: 74 页 / 1054 K
品牌: IBM [ IBM ]
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Datasheet  
IBM PowerPC 750GX RISC Microprocessor  
DD1.X  
First, 750GX PD rises as TJ increases, so it is most useful to measure PD while the 750GX junction tempera-  
ture is at maximum. While not specified or guaranteed, this rise in PD with TJ is typically less than 1 W per  
10°C. So regardless of other factors, the minimum cooling solution must have a maximum temperature rise of  
no more than 10°C/W. This minimum cooling solution is not generally achievable without a heat sink. A heat  
sink or heat spreader of some sort must always be used in 750GX applications.  
Second, due to process variations, there can be a significant variation in the PD of individual 750GX devices.  
In addition, IBM will occasionally supply “downbinned” parts. These are faster parts that are shipped in place  
of the speed that was ordered. For example, some parts that are marked as 800 MHz may actually run as fast  
as 933 MHz. These 933 MHz parts will dissipate more power at 800 MHz than the 800 MHz parts. So power  
dissipation analysis should be conducted using the fastest parts available.  
Finally, regardless of methodology, IBM only supports system designs that successfully maintain the  
maximum junction temperature within the datasheet limits. IBM also supports designs that rely on the  
maximum PD values given in this datasheet and supply a cooling solution sufficient to dissipate that amount  
of power while keeping the maximum junction temperature below the maximum TJ.  
5.7.3 Internal Package Conduction Resistance  
For the exposed-die packaging technology, shown in Table 3-3, Package Thermal Characteristics, on  
page 16, the intrinsic conduction thermal resistance paths illustrated in Figure 5-8 on page 65 are as follows:  
• Die junction-to-case thermal resistance (primary thermal path), defined as the thermal resistance from  
the die junctions to the back (exposed) surface of the die.  
• Die junction-to-lead thermal resistance (not normally a significant thermal path), defined as the thermal  
resistance from the die junctions to the circuit board interface.  
• Die junction-to-ambient thermal resistance (largely dependent on customer-supplied heat sink), defined  
as the sum total of all the thermally conductive components that comprise the end user's application.  
Ambient is further defined as the air temperature in the immediate vicinity of the thermally conductive  
components, including the pre-heat contributions of surrounding heat sources.  
Figure 5-8 on page 65 is a thermal model, in schematic form, of the primary heat transfer path for a package  
with an attached heat sink mounted to a printed-circuit board.  
System Design Information  
Page 64 of 73  
750GX_ds_body.fm SA14-2765-02  
September 2, 2005