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IBM25CPC945CQ3C-2 参数 Datasheet PDF下载

IBM25CPC945CQ3C-2图片预览
型号: IBM25CPC945CQ3C-2
PDF下载: 下载PDF文件 查看货源
内容描述: [Micro Peripheral IC, CMOS, PBGA1182,]
分类和应用:
文件页数/大小: 69 页 / 1861 K
品牌: IBM [ IBM ]
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Datasheet  
CPC945 Bridge and Memory Controller  
Preliminary  
Table 4-2. PCIe Signal Pins  
I/O  
Supply  
Voltage  
Signal  
Type  
Signal  
Levels  
Signal Name  
Signal Description  
PCIE_HSOP[15:0]  
PCIE_HSON[15:0]  
PCIE_HSIP[15:0]  
PCIE_HSIN[15:0]  
PCI Express transmit bus - positive differential signal  
PCI Express transmit bus - negative differential signal  
PCI Express receive bus - positive differential signal  
PCI Express receive bus - negative differential signal  
Output  
Output  
Input  
1.5 V  
1.5 V  
1.5 V  
1.5 V  
VDD  
VDD  
VDD  
VDD  
Input  
PCIE_AV25_0  
PCIE_AV25_1  
PCIE_AV25_2  
Analog  
Power  
PCI Express physical layer (PHY) analog voltage regulator input  
1.65 - 2.75 V N/A  
PCIE_AVREG_0  
PCIE_AVREG_1  
PCIE_AVREG_2  
PCI Express PHY analog voltage regulator monitor output, test only  
Calibration resistor input  
Output  
N/A  
N/A  
PCIE_UCAL_RES0  
PCIE_UCAL_RES1  
Reference  
Input  
N/A  
N/A  
Slot present, an open drain with external pull up. A low input indicates  
that a PCIe card is present.  
PCIE_PRESENTN  
2.5 V  
VDD5  
Table 4-3. DDR SDRAM Signal Pins (Page 1 of 2)  
I/O  
Supply  
Voltage  
Signal  
Type  
Signal  
Levels  
Signal Name  
Signal Description  
DDR random access memory data bus [0:143], 128 bits of data, 16 bits  
of ECC  
DDR_DQ[0:143]  
I/O  
1.8 V  
VDD3  
Positive I/O of the differential data strobes DQS[0:17] for  
DDR_DQ[0:143]:  
DDR_DQ[0:7] - DDR_DQS[0],  
DDR_DQ[8:15] - DDR_DQS[1],  
DDR_DQ[16:23] - DDR_DQS[2],  
DDR_DQ[24:31] - DDR_DQS[3],  
DDR_DQ[32:39] - DDR_DQS[4],  
DDR_DQ[40:47] - DDR_DQS[5],  
DDR_DQ[48:55] - DDR_DQS[6],  
DDR_DQ[56:63] - DDR_DQS[7],  
DDR_DQ[64:71] - DDR_DQS[8],  
DDR_DQ[72:79] - DDR_DQS[9],  
DDR_DQ[80:87] - DDR_DQS[10],  
DDR_DQ[88:95] - DDR_DQS[11],  
DDR_DQ[96:103] -DDR_DQS[12],  
DDR_DQ[104:111] - DDR_DQS[13],  
DDR_DQ[112:119] - DDR_DQS[14],  
DDR_DQ[120:127] - DDR_DQS[15],  
DDR DQ[128:135] - DDR_DQS[16],  
DDR DQ[136:143] - DDR_DQS[17]  
DDR_DQSP[0:17]  
I/O  
1.8 V  
VDD3  
DDR_DQSN[0:17]  
DDR_VREF_0_1  
Negative I/O of the differential data strobes DQS[0:17]  
I/O  
1.8 V  
VDD3  
Voltage reference for DDR_DQ[0:15] and DDR_DQS[0:1].  
VREF is typically generated using external low value (<1 kΩ),  
1% precision resistors. These voltage references should also be  
bypassed to ground with a capacitor to track any ground noise. The ref-  
erence voltages must be stable and low noise. The input current into the  
VREF pins is negligible.  
Reference 0.5 × VDD3 VDD3  
Dimensions and Pin Information  
Page 36 of 69  
A15-6009-03  
December 18, 2007 - IBM Confidential  
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