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IBM11N1645LB-70J 参数 Datasheet PDF下载

IBM11N1645LB-70J图片预览
型号: IBM11N1645LB-70J
PDF下载: 下载PDF文件 查看货源
内容描述: [EDO DRAM Module, 1MX64, 70ns, CMOS, PDMA168]
分类和应用: 动态存储器光电二极管内存集成电路
文件页数/大小: 31 页 / 344 K
品牌: IBM [ IBM ]
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IBM11N1645L  
IBM11N1735Q  
1M x 64/72 DRAM Module  
EDO Page Mode Early Write Cycle  
tRP  
tRASP  
VIH  
RAS  
VIL  
tCRP  
tHPC  
tRCD  
tCP  
tCP  
tRSH  
tHCAS  
tHCAS  
tHCAS  
VIH  
CAS  
VIL  
tRAD  
tCSH  
tASC  
tRAL  
tCAH  
tCAH  
tASR tRAH  
tASC  
tCAH  
tASC  
VIH  
VIL  
Address  
Row  
Column 1  
Column 2  
Column N  
tCWL  
tRWL  
tWCH  
tWCH  
tWRH  
tWRP  
tWCS  
tWP  
tWCS  
tWP  
tWCH  
tWCS  
VIH  
VIL  
tWP  
WE  
NOTE 1  
tDS  
tDH  
tDS  
tDH  
tDS  
tDH  
VIH  
VIL  
DIN  
Data In 1  
Data In 2  
Data In N  
NOTE 1: Implementing WE at RAS time During a Read or Write Cycle is optional.  
: “H” or “L”  
Doing so will facilitate compatibility with future EDO DRAMs.  
OE = Don’t care  
©IBM Corporation. All rights reserved.  
Use is further subject to the provisions at the end of this document.  
50H8035  
SA14-4630-02  
Revised 5/96  
Page 20 of 33  
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