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IBM11E1475B-6RJ 参数 Datasheet PDF下载

IBM11E1475B-6RJ图片预览
型号: IBM11E1475B-6RJ
PDF下载: 下载PDF文件 查看货源
内容描述: [EDO DRAM Module, 1MX32, 60ns, CMOS, SIMM-72]
分类和应用: 动态存储器内存集成电路
文件页数/大小: 22 页 / 230 K
品牌: IBM [ IBM ]
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IBM11D1475B IBM11D2475B  
IBM11E1475B IBM11E2475B  
1M/2M x 32 Desktop ECC-on-SIMM  
Hyper Page Mode (Extended Data Out) Cycle  
-6R  
Symbol  
Parameter  
Units  
Notes  
Min.  
10  
25  
5
Max.  
10K  
tHCAS  
tHPC  
CAS Pulse Width (EDO Mode)  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
EDO Mode Cycle Time (Read/Write)  
Data-out Hold Time from CAS  
tDOH  
tWHZ  
tWPZ  
tCPRH  
tCPA  
Output buffer Turn-Off Delay from WE  
WE Pulse Width to Output Disable at CAS High  
RAS Hold Time from CAS Precharge  
Access Time from CAS Precharge  
EDO Mode RAS Pulse Width  
0
10  
10  
35  
60  
35  
1, 2  
tRASP  
125K  
1. Access time assumes a load of 50pF at VOL = 0.8V and VOH = 2.0V.  
2. Access time is determined by the latter of tRAC, tCAC, tCPA, tAA.  
Refresh Cycle  
-6R  
Symbol  
Parameter  
Units  
Notes  
Min  
10  
Max  
CAS Hold Time  
tCHR  
tCSR  
tWRP  
tWRH  
ns  
ns  
ns  
ns  
(CAS before RAS Refresh Cycle)  
CAS Setup Time  
5
(CAS before RAS Refresh Cycle)  
WE Setup Time  
10  
10  
(CAS before RAS Refresh Cycle)  
WE Hold Time  
(CAS before RAS Refresh Cycle)  
tRPC  
tREF  
RAS Precharge to CAS Hold Time  
Refresh Period  
5
ns  
16  
ms  
1
1. 1024 refreshes are required every 16ms.  
©IBM Corporation. All rights reserved.  
Use is further subject to the provisions at the end of this document.  
75H3507  
SA14-4343-00  
Released 6/96  
Page 9 of 22  
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