IBM11D1475B IBM11D2475B
IBM11E1475B IBM11E2475B
1M/2M x 32 Desktop ECC-on-SIMM
Write Cycle
-6R
Symbol
Parameter
Units
Min
8
Max
—
tWCS
tWCH
tWP
Write Command Set Up Time
Write Command Hold Time
Write Command Pulse Width
DIN Setup Time
ns
ns
ns
ns
ns
5
—
15
8
—
tDS
—
tDH
DIN Hold Time
5
—
Read Cycle
-6R
Symbol
Parameter
Units
Notes
Min
—
—
—
0
Max
tRAC
tCAC
tAA
Access Time from RAS
Access Time from CAS
Access Time from Address
Read Command Setup Time
60
18
30
—
—
—
—
—
—
15
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
1, 2
1, 2
1, 2
tRCS
tRCH
tRRH
tRAL
tCLZ
tCDD
tOFF
Read Command Hold Time to CAS
Read Command Hold Time to RAS
Column Address to RAS Lead Time
CAS to Output in Low-Z
0
3
3
0
30
0
CAS to DIN Delay Time
15
—
Output Buffer Turn-off Delay
4
1. Measured with the specified current load and 50pF at VOL = 0.8V and VOH = 2.0V.
2. Access time is determined by the latter of tRAC, tCAC, tCPA, tAA
3. Either tRCH or tRRH must be satisfied for a read cycle.
.
4. tOFF (max) defines the time at which the output achieves the open circuit condition and is not referenced to output voltage levels.
©IBM Corporation. All rights reserved.
Use is further subject to the provisions at the end of this document.
75H3507
SA14-4343-00
Released 6/96
Page 8 of 22
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