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IBM11E1475B-6RJ 参数 Datasheet PDF下载

IBM11E1475B-6RJ图片预览
型号: IBM11E1475B-6RJ
PDF下载: 下载PDF文件 查看货源
内容描述: [EDO DRAM Module, 1MX32, 60ns, CMOS, SIMM-72]
分类和应用: 动态存储器内存集成电路
文件页数/大小: 22 页 / 230 K
品牌: IBM [ IBM ]
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IBM11D1475B IBM11D2475B  
IBM11E1475B IBM11E2475B  
1M/2M x 32 Desktop ECC-on-SIMM  
Truth Table  
Row  
Address  
Column  
Address  
Function  
RAS  
CAS  
WE  
All DQ bits  
Standby  
Read  
H
L
L
HX  
X
H
L
X
X
High Impedance  
Valid Data Out  
Valid Data In  
L
L
Row  
Row  
Col  
Col  
Early-Write  
EDO Mode - Read:  
1st Cycle  
HL  
HL  
HL  
L
L
L
H
H
L
Row  
N/A  
Col  
Col  
Col  
Valid Data Out  
Valid Data Out  
Valid Data In  
Subsequent Cycles  
EDO Mode - Write:  
1st Cycle  
Row  
HL  
Subsequent Cycles  
RAS-Only Refresh  
L
L
X
H
H
L
N/A  
Row  
X
Col  
N/A  
X
Valid Data In  
High Impedance  
High Impedance  
Data Out  
L
H
L
L
L
HL  
CAS-Before-RAS Refresh  
LHL  
LHL  
Read  
Row  
Row  
Col  
Col  
Hidden Refresh  
Write  
Data In  
Presence Detect  
1M x 32  
2M x 32  
-6R  
Pin  
-6R  
VSS  
VSS  
NC  
NC  
PD1  
PD2  
PD3  
PD4  
NC  
NC  
NC  
NC  
1. NC= OPEN, V = GND  
ss  
©IBM Corporation. All rights reserved.  
Use is further subject to the provisions at the end of this document.  
75H3507  
SA14-4343-00  
Released 6/96  
Page 4 of 22  
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