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IBM041811TLAB-6 参数 Datasheet PDF下载

IBM041811TLAB-6图片预览
型号: IBM041811TLAB-6
PDF下载: 下载PDF文件 查看货源
内容描述: [Standard SRAM, 64KX18, 3ns, CMOS, PBGA119, BGA-119]
分类和应用: 时钟静态存储器内存集成电路
文件页数/大小: 22 页 / 163 K
品牌: IBM [ IBM ]
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IBM041811TLAB
IBM043611TLAB
32K x 36 & 64K x 18 SRAM
Preliminary
Capacitance
(T
A
= 0 to +70°C, V
DD
= 3.3V
−5%
+ 10%, f = 1MHz)
Parameter
Input Capacitance
Data I/O Capacitance (DQ0-DQ35)
Symbol
C
IN
C
OUT
Test Condition
V
IN
= 0V
V
OUT
= 0V
Max
4
5
Units
pF
pF
V
DD
= 3.3V
5% + 10%, V
DDQ
= 1.5V
±
7%)
Parameter
Output “High” Level Voltage
Output “Low” Level Voltage
Programmable Impedance Output Driver DC Electrical Characteristics
(T
A
= 0 to +70°C,
Symbol
V
OH
V
OL
Min.
V
DDQ
/ 2
V
SS
Max.
V
DDQ
V
DDQ
/ 2
Units
V
V
Notes
1, 3
2, 3
1. I
OH
= (V
DDQ
/ 2) / (RQ / 5)
±
25% @ V
OH
= V
DDQ
/ 2 For: 150Ω
RQ
350Ω.
2. I
OL
= (V
DDQ
/ 2) / (RQ / 5)
±
25% @ V
OL
= V
DDQ
/ 2 For: 150Ω
RQ
350Ω.
3. Parameter tested with RQ = 250Ω and V
DDQ
= 1.5V.
AC Test Conditions
(T
A
= 0 to +70°C, V
DD
= 3.3V
5% + 10%)
Parameter
Output Driver Supply Voltage
Input High Level
Input Low Level
Input Reference Voltage
Differential Clocks Voltage
Clocks Common Mode Voltage
Input Rise Time
Input Fall Time
I/O Signals Reference Level (except K, C Clocks)
Clocks Reference Level
Output Load Conditions
1. See figure on page 11.
2. Parameter tested with RQ = 250Ω and V
DDQ
= 1.5V.
Symbol
V
DDQ
V
IH
V
IL
V
REF
V
DIF-CLK
V
CM-CLK
T
R
T
F
Conditions
1.5
1.25
0.25
0.75
1.0
0.75
0.5
0.5
0.75
Differential Cross Point
Units
V
V
V
V
V
V
ns
ns
V
V
Notes
©IBM Corporation. All rights reserved.
Use is further subject to the provisions at the end of this document.
77H9965.T5
10/98
Page 8 of 22