IBM041811TLAB
IBM043611TLAB
32K x 36 & 64K x 18 SRAM
Preliminary
Capacitance (TA = 0 to +70°C, VDD = 3.3V −5% + 10%, f = 1MHz)
Parameter
Symbol
Test Condition
Max
4
Units
pF
C
V
= 0V
= 0V
Input Capacitance
Data I/O Capacitance (DQ0-DQ35)
IN
IN
C
OUT
V
OUT
5
pF
Programmable Impedance Output Driver DC Electrical Characteristics (TA = 0 to +70°C,
VDD = 3.3V − 5% + 10%, VDDQ = 1.5V ± 7%)
Parameter
Output “High” Level Voltage
Symbol
Min.
Max.
Units
V
Notes
1, 3
V
V
OH
V
DDQ
/ 2
DDQ
V
V
V
SS
Output “Low” Level Voltage
V
2, 3
DDQ
/ 2
OL
1.
2.
I
I
= (V
/ 2) / (RQ / 5) ± 25% @ V = V
/ 2 For: 150Ω ≤ RQ ≤ 350Ω.
/ 2 For: 150Ω ≤ RQ ≤ 350Ω.
OH
OL
DDQ
OH
DDQ
/ 2) / (RQ / 5) ± 25% @ V = V
OL DDQ
= (V
DDQ
3. Parameter tested with RQ = 250Ω and V
= 1.5V.
DDQ
AC Test Conditions (TA = 0 to +70°C, VDD = 3.3V − 5% + 10%)
Parameter
Output Driver Supply Voltage
Symbol
Conditions
1.5
Units
Notes
V
V
V
DDQ
V
Input High Level
1.25
0.25
0.75
1.0
IH
V
IL
Input Low Level
V
V
Input Reference Voltage
Differential Clocks Voltage
Clocks Common Mode Voltage
Input Rise Time
V
REF
V
V
DIF-CLK
CM-CLK
V
0.75
0.5
V
T
R
ns
T
F
Input Fall Time
0.5
0.75
ns
V
I/O Signals Reference Level (except K, C Clocks)
Clocks Reference Level
Differential Cross Point
V
Output Load Conditions
1, 2
1. See figure on page 11.
2. Parameter tested with RQ = 250Ω and V
= 1.5V.
DDQ
©IBM Corporation. All rights reserved.
Use is further subject to the provisions at the end of this document.
77H9965.T5
10/98
Page 8 of 22
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