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IBM041811TLAB-6 参数 Datasheet PDF下载

IBM041811TLAB-6图片预览
型号: IBM041811TLAB-6
PDF下载: 下载PDF文件 查看货源
内容描述: [Standard SRAM, 64KX18, 3ns, CMOS, PBGA119, BGA-119]
分类和应用: 时钟静态存储器内存集成电路
文件页数/大小: 22 页 / 163 K
品牌: IBM [ IBM ]
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IBM041811TLAB  
IBM043611TLAB  
Preliminary  
32K x 36 & 64K x 18 SRAM  
Pin Description  
SA0-SA15  
DQ0-DQ35  
K, K  
Address Input  
G
SS  
Asynchronous Output Enable  
Data I/O  
Synchronous Select  
Differential Input-Register Clocks  
Write Enable, Global  
M1, M2  
Mode Inputs- Selects Read Protocol Operation.  
GTL/HSTL Input Reference Voltage  
V
(2)  
SW  
REF  
V
SBWa  
SBWb  
Write Enable, Byte a (DQ0-DQ8)  
Write Enable, Byte b (DQ9-DQ17)  
Power Supply (+3.3V)  
Ground  
DD  
V
SS  
V
SBWc  
SBWd  
Write Enable, Byte c (DQ18-DQ26)  
Write Enable, Byte d (DQ27-DQ35)  
IEEE 1149.1 Test Inputs (LVTTL levels)  
IEEE 1149.1 Test Output (LVTTL level)  
Output Power Supply  
Asynchronous Sleep Mode  
Output Driver Impedance Control  
No Connect  
DDQ  
ZZ  
ZQ  
NC  
TMS,TDI,TCK  
TDO  
Block Diagram  
SA0-SA15  
K
SS  
ZZ  
RD Add  
Register  
WR Add  
Register  
32K x 36  
or  
Latch  
64K x 18  
Array  
SW  
Register  
SW  
Register  
SW  
Column Decode  
Read/Write Amp  
SBW  
SBW  
Register  
SBW  
Register  
Latch  
Write  
2:1 MUX  
Buffer  
Data Out  
Register  
SS  
Register  
SS  
Register  
G
DQ0-DQ35  
©IBM Corporation. All rights reserved.  
Use is further subject to the provisions at the end of this document.  
77H9965.T5  
10/98  
Page 3 of 22  
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