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IBM0364804PT3B-360 参数 Datasheet PDF下载

IBM0364804PT3B-360图片预览
型号: IBM0364804PT3B-360
PDF下载: 下载PDF文件 查看货源
内容描述: [Synchronous DRAM, 8MX8, 6ns, CMOS, PDSO54, 0.400 INCH, PLASTIC, TSOP2-54]
分类和应用: 时钟动态存储器光电二极管内存集成电路
文件页数/大小: 72 页 / 1201 K
品牌: IBM [ IBM ]
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Discontinued (8/99 - last order; 12/99 - last ship)  
IBM0364804 IBM0364164  
IBM0364404 IBM03644B4  
64Mb Synchronous DRAM - Die Revision B  
Burst write operations will be terminated by the Precharge command. The last write data that will be properly  
stored in the device is that write data that is presented to the device a number of clock cycles prior to the Pre-  
charge command equal to the Data-in to Precharge delay, tDPL  
.
Precharge Termination of a Burst Write  
(Burst Length = 8, CAS Latency =2, 3)  
T6 T7 T8  
T0  
T1  
T2  
T3  
T4  
T5  
CLK  
NOP  
NOP  
NOP  
Precharge A  
NOP  
NOP  
NOP  
NOP  
WRITE Ax0  
COMMAND  
DQM  
t
DPL  
CAS latency = 2  
tCK2, DQs  
DIN Ax0  
DIN Ax0  
DIN Ax1  
DIN Ax1  
DIN Ax2  
t
DPL  
CAS latency = 3  
tCK3, DQs  
DIN Ax2  
©IBM Corporation. All rights reserved.  
Use is further subject to the provisions at the end of this document.  
19L3264.E35855A  
1/28/99  
 
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