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IBM0316809CT3D-10 参数 Datasheet PDF下载

IBM0316809CT3D-10图片预览
型号: IBM0316809CT3D-10
PDF下载: 下载PDF文件 查看货源
内容描述: [Synchronous DRAM, 2MX8, 8ns, CMOS, PDSO44, 0.400 INCH, PLASTIC, TSOP2-44]
分类和应用: 时钟动态存储器光电二极管内存集成电路
文件页数/大小: 120 页 / 1896 K
品牌: IBM [ IBM ]
 浏览型号IBM0316809CT3D-10的Datasheet PDF文件第43页浏览型号IBM0316809CT3D-10的Datasheet PDF文件第44页浏览型号IBM0316809CT3D-10的Datasheet PDF文件第45页浏览型号IBM0316809CT3D-10的Datasheet PDF文件第46页浏览型号IBM0316809CT3D-10的Datasheet PDF文件第48页浏览型号IBM0316809CT3D-10的Datasheet PDF文件第49页浏览型号IBM0316809CT3D-10的Datasheet PDF文件第50页浏览型号IBM0316809CT3D-10的Datasheet PDF文件第51页  
Discontinued (12/98 - last order; 9/99 last ship)  
IBM0316409C IBM0316809C IBM0316169C  
IBM03164B9C  
16Mb Synchronous DRAM-Die Revision D  
Operating Currents (T = 0 to +70˚C, V = 3.3V ± 0.3V)  
A
DD  
Organization  
Units Notes  
CAS  
Speed  
Sort  
tRC(min)  
Symbol  
Parameter  
Test Condition  
Latency  
X4  
40  
X8  
X16  
tRC = ∞  
tCK=30 ns  
CL=1  
CL=2  
-10  
-80  
45  
55  
mA  
tRC = ∞  
tCK=12 ns  
90  
95  
75  
110  
tRC = ∞  
tCK=15 ns  
-360  
-10  
mA  
t
RC = Infinity  
CK tCK(min)  
O = 0mA  
Operating Current  
Burst Length = Full  
Page  
1, 2, 3,  
4
tRC = ∞  
tCK=15 ns  
ICC9  
t
70  
75  
90  
I
tRC = ∞  
tCK=8 ns  
-80  
125  
130  
105  
105  
85  
170  
tRC = ∞  
tCK=10 ns  
CL=3  
CL=1  
CL=2  
-360  
-10  
mA  
mA  
mA  
tRC = ∞  
tCK=10 ns  
100  
85  
135  
90  
tRC = ∞  
tCK=30 ns  
-10  
tRC = ∞  
tCK=12ns  
-80  
165  
165  
130  
130  
220  
175  
175  
175  
Operating Current  
1-N Rule  
tRC = ∞  
tCK=15 ns  
-360  
-10  
t
RC = Infinity  
tRC = ∞  
tCK=15 ns  
(Continuous  
ICC10  
t
CK tCK(min)  
130  
220  
140  
240  
1, 2, 3  
Read/Write cycles  
with new column  
address registered  
each clock cycle)  
IO = 0mA  
tRC = ∞  
tCK=8 ns  
-80  
tRC = ∞  
tCK=10 ns  
CL=3  
-360  
-10  
mA  
tRC = ∞  
tCK=10 ns  
175  
190  
1. The specified values are obtained with the output open.  
2. The specified values are valid when addresses and DQs are changed no more than once during tCK(min).  
3. For stacked devices: this is the active portion only.The total stack current includes the Precharge Standby current of the inactive  
deck (Operating Current+ ICC1N).  
4. The specified values are obtained when the programmed burst length is executed to completion without interruption by a subse-  
quent burst Read or Write cycle.  
©IBM Corporation. All rights reserved.  
Use is further subject to the provisions at the end of this document.  
08J3348.E35853  
5/98  
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