Discontinued (12/98 - last order; 9/99 last ship)
IBM0316409C IBM0316809C IBM0316169C
IBM03164B9C
16Mb Synchronous DRAM-Die Revision D
Capacitance (T = 25°C, f=1MHz, V = 3.3V ± 0.3V)
A
DD
Symbol
CI1
Parameter
Min.
2.0
2.0
2.0
Typ
2.7
2.7
4.0
Max.
4.0
Units
pF
Notes
Input Capacitance (A0 - A11)
1
1
1
CI2
Input Capacitance (RAS, CAS, WE, CS, CLK, CKE, DQM)
Output Capacitance (DQ0 - DQ15)
4.0
pF
CO
5.0
pF
1. Multiply given planar values by 2 for 2-High stacked device.
DC Electrical Characteristics (T = 0 to +70˚C, V = 3.3V ± 0.3V)
A
DD
Symbol
Parameter
Min.
Max.
+1
Units
Input Leakage Current, any input
II(L)
µA
-1
-1
(0.0V ≤ VIN ≤ 3.6V), All Other Pins Not Under Test = 0V
Output Leakage Current
IO(L)
VOH
VOL
µA
V
+1
VDDQ
0.4
(DOUT is disabled, 0.0V ≤ VOUT ≤ 3.6V)
Output Level (TTL)
2.4
0.0
Output “H” Level Voltage (IOUT = -2.0mA)
Output Level (TTL)
V
Output “L” Level Voltage (IOUT = +2.0mA)
©IBM Corporation. All rights reserved.
Use is further subject to the provisions at the end of this document.
08J3348.E35853
5/98
Page 44 of 120
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