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IBM0316809CT3D-10 参数 Datasheet PDF下载

IBM0316809CT3D-10图片预览
型号: IBM0316809CT3D-10
PDF下载: 下载PDF文件 查看货源
内容描述: [Synchronous DRAM, 2MX8, 8ns, CMOS, PDSO44, 0.400 INCH, PLASTIC, TSOP2-44]
分类和应用: 时钟动态存储器光电二极管内存集成电路
文件页数/大小: 120 页 / 1896 K
品牌: IBM [ IBM ]
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Discontinued (12/98 - last order; 9/99 last ship)  
IBM0316409C IBM0316809C IBM0316169C  
IBM03164B9C  
16Mb Synchronous DRAM-Die Revision D  
Operating Currents (T = 0 to +70˚C, V = 3.3V ± 0.3V)  
A
DD  
Organization  
X8  
CAS  
Speed  
Sort  
tRC(min)  
Symbol  
Parameter  
Test Condition  
Units Notes  
mA  
Latency  
X4  
95  
X16  
95  
CL=1  
CL=2  
90 ns  
72 ns  
-10  
-80  
95  
130  
130  
105  
105  
155  
160  
125  
75  
135  
90 ns  
-360  
-10  
mA  
t
t
RC = tRC(min)  
CK tCK(min)  
O = 0mA  
Operating Current  
Burst Length = 1  
ICC5  
90 ns  
105  
155  
110  
160  
1, 2, 3  
I
72 ns  
-80  
CL=3  
CL=1  
CL=2  
70 ns  
-360  
-10  
mA  
mA  
90 ns  
125  
75  
130  
80  
120 ns  
84 ns  
-10  
-80  
125  
125  
100  
100  
155  
155  
125  
65  
130  
105 ns  
105 ns  
80 ns  
-360  
-10  
mA  
t
t
RC = tRC(min)  
CK tCK(min)  
O = 0mA  
Operating Current  
Burst Length = 2  
1, 2, 3,  
4
ICC6  
ICC7  
ICC8  
100  
155  
105  
160  
I
-80  
CL=3  
CL=1  
CL=2  
80 ns  
-360  
-10  
mA  
mA  
100 ns  
180 ns  
108 ns  
135 ns  
135 ns  
96 ns  
125  
65  
130  
70  
-10  
-80  
115  
120  
95  
125  
-360  
-10  
mA  
t
t
RC = tRC(min)  
CK tCK(min)  
O = 0mA  
Operating Current  
Burst Length = 4  
1, 2, 3,  
4
90  
95  
100  
160  
I
-80  
150  
155  
150  
125  
60  
CL=3  
CL=1  
CL=2  
100 ns  
120 ns  
300 ns  
156 ns  
195 ns  
195 ns  
128 ns  
140 ns  
160 ns  
-360  
-10  
mA  
mA  
120  
55  
130  
65  
-10  
-80  
105  
110  
90  
120  
-360  
-10  
mA  
t
t
RC = tRC(min)  
CK tCK(min)  
O = 0mA  
Operating Current  
Burst Length = 8  
1, 2, 3,  
4
85  
90  
100  
165  
I
-80  
150  
155  
145  
125  
CL=3  
-360  
-10  
mA  
120  
135  
1. The specified values are obtained with the output open.  
2. The specified values are valid when addresses and DQs are changed no more than once during tCK(min).  
3. For stacked devices: this is the active portion only.The total stack current includes the Precharge Standby current of the inactive  
deck (Operating Current+ ICC1N).  
4. The specified values are obtained when the programmed burst length is executed to completion without interruption by a subse-  
quent burst Read or Write cycle.  
©IBM Corporation. All rights reserved.  
Use is further subject to the provisions at the end of this document.  
08J3348.E35853  
5/98  
 
 
 
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