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IBM0316809CT3-11 参数 Datasheet PDF下载

IBM0316809CT3-11图片预览
型号: IBM0316809CT3-11
PDF下载: 下载PDF文件 查看货源
内容描述: [Synchronous DRAM, 2MX8, 10ns, CMOS, PDSO44, 0.400 INCH, PLASTIC, TSOP2-44]
分类和应用: 时钟动态存储器光电二极管内存集成电路
文件页数/大小: 100 页 / 1216 K
品牌: IBM [ IBM ]
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IBM0316809C IBM0316409C  
IBM0316169C  
16Mbit Synchronous DRAM  
Operating Currents (T = 0 to +70˚C, V = 3.3V ± 0.3V)  
A
DD  
Organization  
X8  
CAS  
Latency  
Speed  
Sort  
tRC(min)  
Symbol  
Parameter  
Test Condition  
Units Notes  
X4  
85  
X16  
90  
tRC = ∞  
tCK=30 ns  
-10  
-11  
-12  
-13  
-10  
-11  
-12  
-13  
-10  
-11  
-12  
-13  
85  
80  
tRC = ∞  
tCK=33 ns  
80  
85  
CL=1  
CL=2  
CL=3  
mA  
tRC = ∞  
tCK=36 ns  
80  
80  
85  
tRC = ∞  
tCK=39 ns  
75  
75  
80  
tRC = ∞  
tCK=15 ns  
130  
120  
115  
110  
175  
160  
150  
140  
130  
120  
115  
110  
175  
160  
150  
145  
140  
130  
120  
115  
190  
175  
165  
155  
Operating Current  
1-N Rule  
tRC = ∞  
tCK=16.5 ns  
tRC = Infinity  
(Continuous  
ICC10  
t
CK tCK(min)  
mA  
1, 2  
Read/Write cycles  
with new column  
address registered  
each clock cycle)  
tRC = ∞  
tCK=18 ns  
IO = 0mA  
tRC = ∞  
tCK=19.5 ns  
tRC = ∞  
tCK=10 ns  
tRC = ∞  
tCK=11 ns  
mA  
tRC = ∞  
tCK=12 ns  
tRC = ∞  
tCK=13 ns  
1. The specified values are obtained with the output open.  
2. The specified values are valid when addresses and DQ’s are changed no more than once during tCK(min).  
3. The specified values are obtained when the programmed burst length is executed to completion without interruption by a subse-  
quent burst Read or Write cycle.  
©IBM Corporation, 1996. All rights reserved.  
Use is further subject to the provisions at the end of this document.  
07H3997  
SA14-4711-02  
Revised 05/96  
Page 34 of 100  
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