IBM0316809C IBM0316409C
IBM0316169C
16Mbit Synchronous DRAM
Absolute Maximum Ratings
Symbol
VDD
VDDQ
VIN
Parameter
Power Supply Voltage
Rating
-1.0 to +4.6
-1.0 to +4.6
-1.0 to +4.6
-1.0 to +4.6
0 to +70
-55 to +125
1.0
Units
V
Notes
1
1
1
1
1
1
1
1
Power Supply Voltage for Output
Input Voltage
V
V
VOUT
TOPR
TSTG
PD
Output Voltage
V
°C
°C
Operating Temperature
Storage Temperature
Power Dissipation
W
IOUT
Short Circuit Output Current
50
mA
1. Stresses greater than those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. This is a
stress rating only and functional operation of the device at these or any other conditions above those indicated in the operational
sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect reli-
ability.
Recommended DC Operating Conditions (T = 0 to 70˚C)
A
Rating
Symbol
Parameter
Supply Voltage
Units
Notes
Min.
3.0
Typ.
3.3
3.3
—
Max.
3.6
VDD
VDDQ
VIH
V
V
V
V
1
1
1
1
Supply Voltage for Output
Input High Voltage
3.0
3.6
2.0
VDD + 0.3
0.8
VIL
Input Low Voltage
-0.3
—
1. All voltages referenced to VSS and VSSQ.
Capacitance (T = 25°C, f=1MHz, V = 3.3V ± 0.3V)
A
DD
Symbol
CI1
Parameter
Min.
2.0
2.0
2.0
Typ
2.7
2.7
4.0
Max.
Units
pF
Notes
Input Capacitance (A0 - A11)
4.0
4.0
5.0
CI2
Input Capacitance (RAS, CAS, WE, CS, CLK, CKE, DQM)
Output Capacitance (DQ0 - DQ15)
pF
CO
pF
©IBM Corporation, 1996. All rights reserved.
Use is further subject to the provisions at the end of this document.
07H3997
SA14-4711-02
Revised 05/96
Page 30 of 100
IBM [ IBM ]
