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IBM0316809CT3-11 参数 Datasheet PDF下载

IBM0316809CT3-11图片预览
型号: IBM0316809CT3-11
PDF下载: 下载PDF文件 查看货源
内容描述: [Synchronous DRAM, 2MX8, 10ns, CMOS, PDSO44, 0.400 INCH, PLASTIC, TSOP2-44]
分类和应用: 时钟动态存储器光电二极管内存集成电路
文件页数/大小: 100 页 / 1216 K
品牌: IBM [ IBM ]
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IBM0316409C IBM0316809C  
IBM0316169C  
16Mbit Synchronous DRAM  
Write Interrupted by a Read  
A Read Command will interrupt a burst write operation on the same clock cycle that the Read Command is  
registered. The DQ’s must be in the high impedance state at least one cycle before the interrupting read data  
appears on the outputs to avoid data contention. When the Read Command is registered, any residual data  
from the burst write cycle will be ignored. Data that is presented on the DQ pins before the Read Command is  
initiated will actually be written to the memory.  
(Burst Length = 4, CAS latency = 1, 2, 3)  
T0  
T1  
T2  
T3  
T4  
T5  
T6  
T7  
T8  
CLK  
NOP  
WRITE A  
READ B  
NOP  
NOP  
NOP  
NOP  
NOP  
NOP  
COMMAND  
CAS latency = 1  
DIN A  
0
DOUT B  
0
DOUT B  
DOUT B  
DOUT B  
DOUT B  
DOUT B  
DOUT B  
1
2
3
t
CK1, DQ’s  
CAS latency = 2  
don’t care  
don’t care  
DIN A  
0
DOUT B  
DOUT B  
0
1
2
3
t
CK2, DQ’s  
CAS latency = 3  
don’t care  
DIN A  
0
DOUT B  
DOUT B  
DOUT B  
3
0
1
2
t
CK3, DQ’s  
Input data must be removed from the DQ’s at least one clock  
cycle before the Read data appears on the outputs to avoid  
data contention.  
Input data for the Write is masked.  
©IBM Corporation, 1996. All rights reserved.  
Use is further subject to the provisions at the end of this document.  
07H3997  
SA14-4711-02  
Revised 05/96  
Page 17 of 100  
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