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IBM0316809CT3-11 参数 Datasheet PDF下载

IBM0316809CT3-11图片预览
型号: IBM0316809CT3-11
PDF下载: 下载PDF文件 查看货源
内容描述: [Synchronous DRAM, 2MX8, 10ns, CMOS, PDSO44, 0.400 INCH, PLASTIC, TSOP2-44]
分类和应用: 时钟动态存储器光电二极管内存集成电路
文件页数/大小: 100 页 / 1216 K
品牌: IBM [ IBM ]
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IBM0316809C IBM0316409C  
IBM0316169C  
16Mbit Synchronous DRAM  
Method 1: CAS latency = 1 or 2, Burst Length = Any  
When the CAS latency is 1 or 2, the minimum interval between the Read and Write commands is one clock  
cycle.  
Minimum Read to Write Interval: Burst Length = 4, CAS latency = 1, 2  
T0  
T1  
T2  
T3  
T4  
T5  
T6  
T7  
T8  
CLK  
DQM  
1 Clk Interval  
READ A  
BANK A  
ACTIVATE  
NOP  
NOP  
WRITE A  
NOP  
NOP  
NOP  
NOP  
COMMAND  
CAS latency = 1  
DIN A  
DIN A  
DIN A  
DIN A  
DIN A  
DIN A  
DIN A  
DIN A  
0
0
1
1
2
2
3
3
t
CK1, DQ’s  
Must be Hi-Z before  
the Write Command  
CAS latency = 2  
t
CK2, DQ’s  
: “H” or “L”  
Non-minimum Read to Write Interval: Burst Length = 4, CAS latency = 1, 2  
T0  
T1  
T2  
T3  
T4  
T5  
T6  
T7  
T8  
CLK  
DQM  
NOP  
READ A  
NOP  
NOP  
NOP  
WRITE B  
NOP  
NOP  
NOP  
COMMAND  
CAS latency = 1  
DOUT A  
DOUT A  
DOUT A  
DIN B  
DIN B  
DIN B  
DIN B  
DIN B  
DIN B  
DIN B  
DIN B  
0
1
0
0
1
1
2
2
3
3
t
CK1, DQ’s  
Must be Hi-Z before  
the Write Command  
CAS latency = 2  
0
t
CK2, DQ’s  
: “H” or “L”  
©IBM Corporation, 1996. All rights reserved.  
Use is further subject to the provisions at the end of this document.  
07H3997  
SA14-4711-02  
Revised 05/96  
Page 14 of 100  
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