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IBM0316809CT3-11 参数 Datasheet PDF下载

IBM0316809CT3-11图片预览
型号: IBM0316809CT3-11
PDF下载: 下载PDF文件 查看货源
内容描述: [Synchronous DRAM, 2MX8, 10ns, CMOS, PDSO44, 0.400 INCH, PLASTIC, TSOP2-44]
分类和应用: 时钟动态存储器光电二极管内存集成电路
文件页数/大小: 100 页 / 1216 K
品牌: IBM [ IBM ]
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IBM0316409C IBM0316809C  
IBM0316169C  
16Mbit Synchronous DRAM  
Method 2: CAS latency = 3, Burst Length = 1, 2, 4, or 8  
If the CAS latency is 3 and the burst length is not full page, then a Burst Read operation can be interrupted by  
a Write command provided that the Write command occurs after a minimum interval of [burst length +1]  
cycles.  
Read to Write Interval: Burst Length = 4, CAS latency = 3  
T0  
T1  
T2  
T3  
T4  
T5  
T6  
T7  
T8  
CLK  
Minimum delay between the Read and Write Commands = 4+1 = 5 cycles  
DQM  
NOP  
READ A  
NOP  
NOP  
NOP  
NOP  
WRITE B  
NOP  
NOP  
COMMAND  
DIN B  
0
DIN B  
DIN B  
2
DOUT A  
DQ’s  
1
0
Must be Hi-Z before  
the Write Command  
: “H” or “L”  
If the CAS latency is 3 and the burst length is full page, then a Burst Read operation can never be interrupted  
by a Write command. In this situation, the Burst Read operation must be interrupted by a Burst Stop  
Command before a Write operation can be issued to the open bank.  
©IBM Corporation, 1996. All rights reserved.  
Use is further subject to the provisions at the end of this document.  
07H3997  
SA14-4711-02  
Revised 05/96  
Page 15 of 100  
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