1HY5PS12421B(L)FP
1HY5PS12821B(L)FP
1HY5PS121621B(L)FP
3.5. Input/Output Capacitance
DDR2- 400
DDR2- 533
DDR2 667
DDR2 800
Parameter
Symbol
Units
Min Max Min Max Min Max
Input capacitance, CK and CK
CCK
CDCK
CI
1.0
x
2.0
0.25
2.0
1.0
x
2.0
0.25
2.0
1.0
x
2.0
0.25
1.75
0.25
3.5
pF
pF
pF
pF
pF
pF
Input capacitance delta, CK and CK
Input capacitance, all other input-only pins
Input capacitance delta, all other input-only pins
Input/output capacitance, DQ, DM, DQS, DQS
Input/output capacitance delta, DQ, DM, DQS, DQS
1.0
x
1.0
x
1.0
x
CDI
0.25
4.0
0.25
3.5
CIO
2.5
x
2.5
x
2.5
x
CDIO
0.5
0.5
0.5
4. Electrical Characteristics & AC Timing Specification
( 0 ℃ ≤ TCASE ≤ 95℃; VDDQ = 1.8 V +/- 0.1V; VDD = 1.8V +/- 0.1V)
Refresh Parameters by Device Density
Parameter
Symbol
256Mb 512Mb 1Gb
2Gb
4Gb Units
Refresh to Active
/Refresh command time
tRFC
75
105
127.5
195
327.5
ns
0 ℃≤ TCASE ≤ 85℃
85℃ < TCASE ≤ 95℃
7.8
3.9
7.8
3.9
7.8
3.9
7.8
3.9
7.8
3.9
us
us
Average periodic refresh interval
tREFI
DDR2 SDRAM speed bins and tRCD, tRP and tRC for corresponding bin
DDR2-
800D
DDR2-
800E
DDR2-
667C
DDR2-
667D
DDR2-
533C
DDR2-
Speed
Units
400B
3-3-3
min
5
Bin(CL-tRCD-tRP)
Parameter
CAS Latency
tRCD
5-5-5
min
5
6-6-6
min
6
4-4-4
min
4
5-5-5
min
5
4-4-4
min
4
tCK
ns
12.5
12.5
45
15
12
15
15
15
tRP
15
12
15
15
15
ns
tRAS
45
45
45
45
40
ns
tRC
57.25
60
57
60
60
55
ns
Rev. 0.7 / Oct. 2007
20
HYNIX [ HYNIX SEMICONDUCTOR ]
