欢迎访问ic37.com |
会员登录 免费注册
发布采购

H5PS1G83EFR 参数 Datasheet PDF下载

H5PS1G83EFR图片预览
型号: H5PS1G83EFR
PDF下载: 下载PDF文件 查看货源
内容描述: 1GB DDR2 SDRAM [1Gb DDR2 SDRAM]
分类和应用: 动态存储器双倍数据速率
文件页数/大小: 44 页 / 566 K
品牌: HYNIX [ HYNIX SEMICONDUCTOR ]
 浏览型号H5PS1G83EFR的Datasheet PDF文件第7页浏览型号H5PS1G83EFR的Datasheet PDF文件第8页浏览型号H5PS1G83EFR的Datasheet PDF文件第9页浏览型号H5PS1G83EFR的Datasheet PDF文件第10页浏览型号H5PS1G83EFR的Datasheet PDF文件第12页浏览型号H5PS1G83EFR的Datasheet PDF文件第13页浏览型号H5PS1G83EFR的Datasheet PDF文件第14页浏览型号H5PS1G83EFR的Datasheet PDF文件第15页  
H5PS1G43EFR  
H5PS1G83EFR  
H5PS1G63EFR  
3. AC & DC Operating Conditions  
3.1 DC Operating Conditions  
3.1.1 Recommended DC Operating Conditions (SSTL_1.8)  
Rating  
Symbol  
Parameter  
Supply Voltage  
Units  
Notes  
Min.  
Typ.  
Max.  
VDD  
VDDL  
VDDQ  
VREF  
VTT  
1.7  
1.8  
1.9  
V
V
1
1.7  
1.8  
1.8  
1.9  
1,2  
1,2  
3,4  
5
Supply Voltage for DLL  
Supply Voltage for Output  
Input Reference Voltage  
Termination Voltage  
1.7  
1.9  
V
0.49*VDDQ  
VREF-0.04  
0.50*VDDQ  
VREF  
0.51*VDDQ  
VREF+0.04  
mV  
V
Note:  
1. Min. Typ. and Max. values increase by 100mV for C3(DDR2-533 3-3-3) speed option.  
2. VDDQ tracks with VDD,VDDL tracks with VDD. AC parameters are measured with VDD,VDDQ and VDD.  
3. The value of VREF may be selected by the user to provide optimum noise margin in the system. Typically the  
value of VREF is expected to be about 0.5 x VDDQ of the transmitting device and VREF is expected to track varia-  
tions in VDDQ  
4. Peak to peak ac noise on VREF may not exceed +/-2% VREF (dc).  
5. VTT of transmitting device must track VREF of receiving device.  
3.1.2 ODT DC electrical characteristics  
PARAMETER/CONDITION  
SYMBOL MIN NOM MAX UNITS NOTES  
Rtt effective impedance value for EMR(A6,A2)=0,1; 75 ohm  
Rtt effective impedance value for EMR(A6,A2)=1,0; 150 ohm  
Rtt effective impedance value for EMR(A6,A2)=1,1; 50 ohm  
Deviation of VM with respect to VDDQ/2  
Rtt1(eff)  
Rtt2(eff)  
Rtt3(eff)  
delta VM  
60  
120  
40  
75  
150  
50  
90  
180  
60  
ohm  
ohm  
ohm  
%
1
1
1
1
-6  
+6  
Note:  
1. Test condition for Rtt measurements  
Measurement Definition for Rtt(eff): Apply VIH (ac) and VIL (ac) to test pin separately, then measure current I(VIH (ac))  
and I(VIL(ac)) respectively. VIH (ac), VIL (ac), and VDDQ values defined in SSTL_18  
V
IH (ac) - VIL (ac)  
Rtt(eff) =  
I(VIH (ac)) - I(VIL (ac))  
Measurement Definition for VM: Measurement Voltage at test pin (mid point) with no load.  
2 x Vm  
delta VM =(  
- 1) x 100%  
VDDQ  
Rev. 0.4 / Nov 2008  
11