H5PS1G43EFR
H5PS1G83EFR
H5PS1G63EFR
2. Maximum DC Ratings
2.1 Absolute Maximum DC Ratings
Symbol
Parameter
Rating
Units
Notes
VDD
- 1.0 V ~ 2.3 V
V
1
Voltage on VDD pin relative to Vss
Voltage on VDDQ pin relative to Vss
Voltage on VDDL pin relative to Vss
Voltage on any pin relative to Vss
Storage Temperature
VDDQ
VDDL
- 0.5 V ~ 2.3 V
- 0.5 V ~ 2.3 V
- 0.5 V ~ 2.3 V
-55 to +100
V
V
1
1
V
IN, VOUT
V
1
TSTG
°C
1, 2
Input leakage current; any input 0V VIN VDD;
all other balls not under test = 0V)
II
-2 uA ~ 2 uA
-5 uA ~ 5 uA
uA
uA
Output leakage current; 0V VOUT VDDQ; DQ
and ODT disabled
IOZ
Note:
1. Stresses greater than those listed under “Absolute Maximum Ratings” may cause permanent damage to the
device. This is a stress rating only and functional operation of the device at these or any other conditions above
those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum rat-
ing conditions for extended periods may affect reliability.
2. Storage Temperature is the case surface temperature on the center/top side of the DRAM. For the measurement
conditions. please refer to JESD51-2 standard.
2.2 Operating Temperature Condition
Symbol
Parameter
Rating
Units
Notes
TOPER
0 to 95
°C
1,2
Operating Temperature
Note:
1. Operating Temperature is the case surface temperature on the center/top side of the DRAM. For the measure-
ment conditions, please refer to JESD51-2 standard.
2. At 85~95° TOPER , Double refresh rate(tREFI: 3.9us) is required, and to enter the self refresh mode at this tem-
perature range it must be required an EMRS command to change itself refresh rate.
Rev. 0.4 / Nov 2008
10
HYNIX [ HYNIX SEMICONDUCTOR ]
