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H55S1G32MFP-75 参数 Datasheet PDF下载

H55S1G32MFP-75图片预览
型号: H55S1G32MFP-75
PDF下载: 下载PDF文件 查看货源
内容描述: 1GB ( 32Mx32bit )移动SDRAM [1Gb (32Mx32bit) Mobile SDRAM]
分类和应用: 动态存储器
文件页数/大小: 53 页 / 908 K
品牌: HYNIX [ HYNIX SEMICONDUCTOR ]
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11  
1Gbit (32Mx32bit) Mobile SDR Memory  
H55S1G(2/3)2MFP Series  
READ  
A read operation starts when a read command is input. Output buffer becomes Low-Z in the (/CAS Latency - 1)  
cycle after read command set. The SDRAM can perform a burst read operation.  
The burst length can be set to 1, 2, 4 and 8. The start address for a burst read is specified by the column address and  
the bank select address at the read command set cycle. In a read operation, data output starts after the number of  
clocks specified by the /CAS Latency. The /CAS Latency can be set to 2 or 3.  
When the burst length is 1, 2, 4 and 8 the DOUT buffer automatically becomes High-Z at the next clock after the suc-  
cessive burst-length data has been output.  
The /CAS latency and burst length must be specified at the mode register.  
tCK  
CLK  
REA  
D
Command  
DQ  
NOP  
NOP  
tOH  
Do0  
tLZ  
Do1  
Do2  
Do3  
tAC  
CL = 2  
REA  
D
NOP  
NOP  
NOP  
tOH  
Do0  
Command  
tLZ  
Do1  
Do2  
Do3  
DQ  
tAC  
Undefined  
Don't Care  
CL = 3  
Read Burst Showing CAS Latency  
Rev 1.2 / Jun. 2008  
28  
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