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H27U4G8F2DTR-BC 参数 Datasheet PDF下载

H27U4G8F2DTR-BC图片预览
型号: H27U4G8F2DTR-BC
PDF下载: 下载PDF文件 查看货源
内容描述: 4千兆( 512M ×8位)NAND闪存 [4 Gbit (512M x 8 bit) NAND Flash]
分类和应用: 闪存
文件页数/大小: 62 页 / 1015 K
品牌: HYNIX [ HYNIX SEMICONDUCTOR ]
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APCPCWM_4828539:WP_0000001WP_0000001  
1
H27(U_S)4G8_6F2D  
4 Gbit (512M x 8 bit) NAND Flash  
1.4 Address role  
DQ0  
A0  
DQ1  
A1  
DQ2  
A2  
DQ3  
A3  
DQ4  
A4  
DQ5  
A5  
DQ6  
A6  
DQ7  
A7  
1st Cycle  
A8  
A9  
A10  
A14  
A22  
A30  
A11  
A15  
A23  
A31  
0
0
0
0
2
nd Cycle  
A12  
A20  
A28  
A13  
A21  
A29  
A16  
A24  
0
A17  
A25  
0
A18  
A26  
0
A19  
A27  
0
3
rd Cycle  
th Cycle  
4
5
th Cycle (*)  
Table 4: Address Cycle Map (x8)  
(*): A30 for 8Gbit DDP(1CE). A30:A31 for 16Gbit QDP(1CE).  
As far as the address bits are concerned, the following rules apply:  
A0 - A11 : column address in the
A12 - A17 : page address in the
A18 : plane address (for multi-plons)  
A19 - A31 : block address  
DQ0  
A0  
DQ5  
A5  
DQ6  
A6  
DQ7  
A7  
1st Cycle  
nd Cycle  
A8  
0
0
0
2
3
rd Cycle  
th Cycle  
A11  
A19  
A27  
A16  
A24  
0
A17  
A25  
0
A18  
A26  
0
4
5
th Cycle (*)  
Table 5: Address Cycle Map (x16)  
(*): A29 for 8Gbit DDP(1CE). A29:A30 for 16Gbit QDP(1CE)  
As far as the address bits are concerned, the following rules apply:  
A0 - A10 : column address in the page  
A11 - A16 : page address in the block  
A17 : plane address (for multi-plane operations) / block address (for normal operations)  
A18 - A30 : block address  
Rev 1.4 / OCT. 2010  
10  
B34416/177.179.157.84/2010-10-08 10:08  
*ba53f20d-240c*  
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