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H27U4G8F2DTR-BC 参数 Datasheet PDF下载

H27U4G8F2DTR-BC图片预览
型号: H27U4G8F2DTR-BC
PDF下载: 下载PDF文件 查看货源
内容描述: 4千兆( 512M ×8位)NAND闪存 [4 Gbit (512M x 8 bit) NAND Flash]
分类和应用: 闪存
文件页数/大小: 62 页 / 1015 K
品牌: HYNIX [ HYNIX SEMICONDUCTOR ]
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APCPCWM_4828539:WP_0000001WP_0000001  
1
H27(U_S)4G8_6F2D  
4 Gbit (512M x 8 bit) NAND Flash  
page re-program guarantee imporve performance, since data insertion can be omitted during re-program operations,  
and save ram buffer at the host in the case of program failure.  
The devices, available in the TSOP48 (12X20mm) package, support the ONFI1.0 specfication and come with four sequ-  
rity features:  
- OTP (one time programmable) area, which is a restricted access area where sensitive data/code can be stored  
permantely.  
- Serial number (unique identifier), which allows the devices to be nuniquely indentified.  
- Read ID2 extention  
- Non-volatile protection to lock sensible data permanently.  
These security features are subject to an NDA (non-disclosure agreement) and are, therefore, no described in the  
datasheet. For more details about them, contact your nearest Hynix sales office.  
1.1.Product List  
PART NUMBER  
H27U4G8F2D  
H27U4G6F2D  
H27S4G8F2D  
H27S4G6F2D  
GE  
PACKAGE  
-
-
-
-
Ts  
)  
CE
16)  
WE
RE#  
ALE  
CLE  
WP#  
VSS  
Figure 1: Logic Diagram  
Rev 1.4 / OCT. 2010  
6
B34416/177.179.157.84/2010-10-08 10:08  
*ba53f20d-240c*  
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