GMM27333230ANTG
AC Characteristics (Ta = 0 to 70C, VCC, VCCQ = 3.3 V +/- 0.3 V, VSS, VSSQ = 0 V)
- 8
- 7K
- 7J
- 10K
Parameter
Symbol
Unit Notes
Min Max Min Max Min Max Min Max
(CL=2)
(CL=3)
12
8
3
3
-
-
-
10
10
3
-
-
15
10
3
-
-
15
10
3
-
-
t
t
CK
CK
System clock
cycle time
ns
1
CLK high pulse width
CLK low pulse width
-
-
-
-
ns
ns
1
1
t
CKH
-
3
-
3
-
3
-
t
CKL
(CL=2)
6
6
-
-
6
6
-
-
8
6
-
-
9
8
-
t
AC
AC
Access time
from CLK
ns
ns
1, 2
1, 2
(CL=3)
-
-
-
-
t
Data-out hold time
3
3
3
3
t
OH
CLK to Data-out low
impedance
CLK to Data-out
high impedance
( CL = 2,3 )
2
-
-
2
-
-
2
-
-
2
-
-
ns 1, 2, 3
t
LZ
6
6
6
7
ns
1, 4
t
t
HZ
DS
Data-in setup time
Data-in hold time
Address setup time
Address hold time
CKE setup time
2
1
2
1
2
-
-
-
-
-
2
1
2
1
2
-
-
-
-
-
2
1
2
1
2
-
-
-
-
-
2
1
2
1
2
-
-
-
-
-
ns
ns
ns
ns
ns
1
1
t
DH
AS
AH
CES
1
t
1
t
1, 5
t
CKE setup time for
power down exit
2
1
-
-
2
1
-
-
2
1
-
-
2
1
-
-
ns
ns
1
1
t
CESP
CKE hold time
t
CEH
Command (CS, RAS,
CAS, WE, DQM)
setup time
2
1
-
-
2
1
-
-
2
1
-
-
2
1
-
-
ns
ns
1
1
t
CS
Command (CS, RAS,
CAS, WE, DQM)
hold time
t
CH
Ref/Active to Ref/Active
command period
Active to Precharge
command period
Active command to
column command
(same bank)
68
48
-
70
50
-
70
50
-
90
60
-
ns
ns
1
1
t
RC
120000
120000
120000
120000
t
RAS
20
20
-
-
20
20
-
-
20
20
-
-
30
30
-
-
ns
ns
1
1
t
RCD
Precharge to active
command period
t
RP
Rev. 1.1/Dec.99
8
HYNIX [ HYNIX SEMICONDUCTOR ]
