GMM27333230ANTG
Absolute Maximum Ratings
Parameter
Symbol
VT
Value
Unit
V
Note
-0.5 to Vcc+0.5
(<= 4.6 (max))
Voltage on any pin relative to VSS
Supply voltage relative to VSS
Short circuit output current
Power dissipation
1
1
VCC
IOUT
PT
-0.5 to +4.6
50
V
mA
W
C
1.0
Operating temperature
Topr
Tstg
0 to +70
-55 to +125
Storage temperature
C
Notes : 1. Respect to VSS
Recommended DC Operating Conditions (Ta = 0 to + 70C)
Parameter
Symbol
VCC, VCCQ
VSS, VSSQ
VIH
Min
3.0
0
Max
3.6
Unit
V
Note
1
Supply voltage
0
V
Input high voltage
Input low voltage
2.0
-0.3
Vcc + 0.3
0.8
V
1, 2
1,3
VIL
V
Notes : 1. All voltage referred to VSS.
2. VIH (max) = 5.6V for pulse width <= 3ns
3. VIL (min) = -2.0V for pulse width <= 3ns
Registered DIMM Operation
1. All control and address signals are registered on-DIMM register and hence delayed by one cycle in
arriving at the SDRAMs. But data is not registered in the register.
2. CAS latency defines the delay from when a READ command is registered on a rising clock edge to
when the data from that READ command becomes available at the outputs. Do not confuse DIMM
CAS latency with the SDRAM CAS latency which is one clock less.
Rev. 1.1/Dec.99
5
HYNIX [ HYNIX SEMICONDUCTOR ]
