GMM27333230ANTG
DC Characteristics (Ta = 0 to 70C, VCC, VCCQ = 3.3 V +/- 0.3 V, VSS, VSSQ= 0 V)
- 8
- 7J
- 10K
- 7K
Max
Parameter
Symbol
Unit Test conditions Notes
Max
Max
Max
Burst length= 1
Operating
current
ICC1
1200
1100
mA
mA
1, 2, 3
5
t
RC = min
CKE = VIL,
CK = 12 ns
Standby current in
power down
ICC2P
40
20
t
Standby current in
power down
(input signal stable)
Standby current in
non power down
(CAS Latency=2)
Standby current in
non power down
(input signal stable)
CKE=VIL,
CK= I nf i ni t y
ICC2PS
ICC2N
mA
mA
mA
6
4
4
t
CKE,CS = VIH,
CK = 12ns
300
280
t
CKE,CS = VIH,
CK = Infinity
ICC2NS
t
CKE = VIL,
CK = 12 ns,
DQ = High-Z
Active standby current
in power down
t
ICC3P
ICC3PS
ICC3N
ICC3NS
100
85
mA
mA
mA
mA
1,2,5
2,6
Active standby current
in power down
(input signal stable)
CKE = VIL,
t
CK = Infinity
CKE,CS = VIH,
CK = 12 ns,
Active standby current
in non power down
t
1,2,4
2,8
550
500
DQ = High-Z
Active standby current
in non power down
(input signal stable)
CKE,CS = VIH,
t
CK = Infinity
Burst
operating
current
( CL= 2 )
ICC4
ICC4
ICC5
1300
1400
2300
1300
1300
2300
1000
1300
2200
1000
1300
1900
mA
mA
mA
t
CK = min
BL = 4
1,2,3
( CL= 3 )
Refresh
current
t
RC = min
3
7
VIH >=VCC - 0.2
VIL <=0.2V
40
Self refresh current
ICC6
mA
Rev. 1.1/Dec.99
6
HYNIX [ HYNIX SEMICONDUCTOR ]
