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HD6473434F16 参数 Datasheet PDF下载

HD6473434F16图片预览
型号: HD6473434F16
PDF下载: 下载PDF文件 查看货源
内容描述: 12伏不能应用于S -掩模模型(单电源规格) ,因为这可能会永久损坏设备。 [12 V must not be applied to the S-mask model (single-power-supply specification), as this may permanently damage the device.]
分类和应用: 外围集成电路微控制器可编程只读存储器时钟
文件页数/大小: 752 页 / 2557 K
品牌: HITACHI [ HITACHI SEMICONDUCTOR ]
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Sample Multiple-Block Erase Program: This program uses the following registers.  
R0: Specifies blocks to be erased (set as explained below), and also stores address used in  
prewrite and erase-verify.  
R1H: Used to test bits 8 to 11 of R0 stores register read data, and also used for dummy write.  
R1L: Used to test bits 0 to 11 of R0.  
R2: Specifies address where address used in prewrite and erase-verify is stored.  
R3: Stores address used in prewrite and erase-verify.  
R4: Stores last address of block to be erased.  
R5: Sets prewrite and erase timing loop counters.  
R6L: Used for prewrite-verify and erase-verify fail count.  
Arbitrary blocks can be erased by setting bits in R0. Write R0 with a word transfer instruction.  
A bit map of R0 and a sample setting for erasing specific blocks are shown next.  
Bit  
R0  
15 14 13 12  
11 10  
LB3 LB2 LB1 LB0 SB7 SB6 SB5 SB4 SB3 SB2 SB1 SB0  
Corresponds to EBR1 Corresponds to EBR2  
9
8
7
6
5
4
3
2
1
0
Note: Clear bits 15, 14, 13, and 12 to 0.  
Example: to erase blocks LB2, SB7, and SB0  
Bit  
R0  
15 14 13 12  
11 10  
LB3 LB2 LB1 LB0 SB7 SB6 SB5 SB4 SB3 SB2 SB1 SB0  
Corresponds to EBR1 Corresponds to EBR2  
9
8
7
6
5
4
3
2
1
0
Setting  
0
0
0
0
0
1
0
0
1
0
0
0
0
0
0
1
R0 is set as follows:  
MOV.W  
MOV.W  
#H'0481,R0  
R0, @EBR1  
The setting of #a, #b, #c, #d, and #e values in the program depends on the clock frequency. Set #a,  
#b, #c, #d, and #e values according to tables 19.9 (1), (2), and 19.10.  
405  
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