欢迎访问ic37.com |
会员登录 免费注册
发布采购

HD6473434F16 参数 Datasheet PDF下载

HD6473434F16图片预览
型号: HD6473434F16
PDF下载: 下载PDF文件 查看货源
内容描述: 12伏不能应用于S -掩模模型(单电源规格) ,因为这可能会永久损坏设备。 [12 V must not be applied to the S-mask model (single-power-supply specification), as this may permanently damage the device.]
分类和应用: 外围集成电路微控制器可编程只读存储器时钟
文件页数/大小: 752 页 / 2557 K
品牌: HITACHI [ HITACHI SEMICONDUCTOR ]
 浏览型号HD6473434F16的Datasheet PDF文件第431页浏览型号HD6473434F16的Datasheet PDF文件第432页浏览型号HD6473434F16的Datasheet PDF文件第433页浏览型号HD6473434F16的Datasheet PDF文件第434页浏览型号HD6473434F16的Datasheet PDF文件第436页浏览型号HD6473434F16的Datasheet PDF文件第437页浏览型号HD6473434F16的Datasheet PDF文件第438页浏览型号HD6473434F16的Datasheet PDF文件第439页  
Notes: 1. In this sample program, the stack pointer (SP) is set at address H'FF80. As the stack  
area, on-chip RAM addresses H'FF7E and H'FF7F are used. Therefore, when executing  
this sample program, addresses H'FF7E and H'FF7F should not be used. In addition,  
the on-chip RAM should not be disabled.  
2. In this sample program, the program written in a ROM area (including external space)  
is transferred into the RAM area and executed in the RAM to which the program is  
transferred. #RAMSTR in the program is the starting destination address in RAM to  
which the program is transferred. #RAMSTR must be set to an even number.  
3. When executing this sample program in the on-chip ROM area or external space,  
#RAMSTR should be set to #START.  
FLMCR:  
EBR1:  
EBR2:  
TCSR:  
STACK:  
.RQU  
.EQU  
.EQU  
.EQU  
.EQU  
H'FF80  
H'FF82  
H'FF83  
H'FFA8  
H'FF80  
.ALIGN  
MOV.W  
2
START:  
#STACK,  
SP  
; Set stack pointer  
; Set the bits in R0 following the description on the previous page. This program is a sample program to erase  
; all blocks.  
MOV.W  
MOV.W  
#H'0FFF, R0  
R0, @EBR1  
; Select blocks to be erased (R0: EBR1/EBR2)  
; Set EBR1/EBR2  
; #RAMSTR is starting destination address to which program is transferred in RAM.  
; Set #RAMSTR to even number.  
MOV.W  
MOV.W  
ADD.W  
MOV.W  
SUB.W  
#RAMSTR, R2  
#ERVADR, R3  
; Starting transfer destination address (RAM)  
;
; #RAMSTR + #ERVADR R2  
;
R3,  
R2  
R3  
R2  
#START,  
R3,  
; Address of data area used in RAM  
MOV.B  
PRETST: CMP.B  
#H'00,  
#H'0C,  
ERASES  
#H'08,  
EBR2PW  
R1L,  
#H'08,  
R1H,  
PREWRT  
PWADD1  
R1L,  
R1L  
R1L  
: Used to test R1L bit in R0  
; R1L = H'0C?  
; If finished checking all R0 bits, branch to ERASES  
;
; Test EBR1 if R1L 8, or EBR2 if R1L < 8  
;
; R1L – 8 R1H  
; Test R1H bit in EBR1 (R0H)  
; If R1H bit in EBR1 (R0H) is 1, branch to PREWRT  
; If R1H bit in EBR1 (R0H) is 0, branch to PWADD1  
; Test R1L bit in EBR2 (R0L)  
; If R1L bit in EBR2 (R0H) is 1, branch to PREWRT  
; R1L + 1 R1L  
BEQ  
CMP.B  
BMI  
MOV.B  
SUBX  
BTST  
BNE  
BRA  
R1L  
R1H  
R1H  
R0H  
EBR2PW: BTST  
BNE  
PWADD1: INC  
MOV.W  
R0L  
R3  
PREWRT  
R1L  
@R2+,  
PRETST  
; Dummy-increment R2  
;
BRA  
406  
 复制成功!