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HD6473434F16 参数 Datasheet PDF下载

HD6473434F16图片预览
型号: HD6473434F16
PDF下载: 下载PDF文件 查看货源
内容描述: 12伏不能应用于S -掩模模型(单电源规格) ,因为这可能会永久损坏设备。 [12 V must not be applied to the S-mask model (single-power-supply specification), as this may permanently damage the device.]
分类和应用: 外围集成电路微控制器可编程只读存储器时钟
文件页数/大小: 752 页 / 2557 K
品牌: HITACHI [ HITACHI SEMICONDUCTOR ]
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19.3.2 User Programming Mode  
When set to user programming mode, the H8/3434F can erase and program its flash memory by  
executing a user program. On-board updates of the on-chip flash memory can be carried out by  
providing on-board circuits for supplying VPP and data, and storing an update program in part of  
the program area.  
To select user programming mode, select a mode that enables the on-chip ROM (mode 2 or 3) and  
apply 12 V to the FVPP pin, either during a reset, or after the reset has ended (been released) but  
while flash memory is not being accessed. In user programming mode, the on-chip supporting  
modules operate as they normally would in mode 2 or 3, except for the flash memory. However,  
hardware standby mode cannot be set while 12 V is applied to the FVPP pin.  
The flash memory cannot be read while it is being programmed or erased, so the update program  
must either be stored in external memory, or transferred temporarily to the RAM area and  
executed in RAM.  
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