3SK298
Electrical Characteristics (Ta = 25°C)
Item
Symbol Min
V(BR)DSX 12
Typ
Max
Unit
Test conditions
ID = 200 µA , VG1S = –3 V,
G2S = –3 V
Drain to source breakdown
voltage
—
—
V
V
Gate 1 to source breakdown
voltage
V(BR)G1SS ±8
V(BR) G2SS ±8
—
—
—
—
V
V
IG1 = ±10 µA, VG2S = VDS = 0
Gate 2 to source breakdown
voltage
IG2 = ±10 µA, VG1S = VDS = 0
Gate 1 cutoff current
Gate 2 cutoff current
Drain current
IG1SS
IG2SS
IDS(on)
—
—
—
—
±100
±100
10
nA
nA
mA
VG1S = ±6 V, VG2S = VDS = 0
VG2S = ±6 V, VG1S = VDS = 0
VDS = 6 V, VG1S = 0.75V,
—
0.5
V
G2S = 3 V
Gate 1 to source cutoff voltage VG1S(off)
Gate 2 to source cutoff voltage VG2S(off)
0
—
+1.0
+1.0
—
V
VDS = 10 V, VG2S = 3V,
ID = 100 µA
0
—
V
VDS = 10 V, VG1S = 3V,
ID = 100 µA
Forward transfer admittance
Input capacitance
|yfs|
16
2.4
20
2.9
1.0
mS
pF
VDS = 6 V, VG2S = 3V,
ID = 10 mA, f = 1 kHz
Ciss
Coss
3.4
VDS = 6 V, VG2S = 3V,
ID = 10 mA, f = 1 MHz
Output capacitance
0.8
—
1.4
pF
pF
dB
Reverse transfer capacitance Crss
0.023 0.04
Power gain
PG
22
25
—
VDS = 6 V, VG2S = 3V,
ID = 10 mA, f = 200 MHz
Noise figure
Power gain
NF
PG
—
1.0
15
1.8
—
dB
dB
12
VDS = 6 V, VG2S = 3V,
ID = 10 mA, f = 900 MHz
Noise figure
Noise figure
NF
NF
—
—
3.2
2.8
4.5
3.5
dB
dB
VDS = 6 V, VG2S = 3V,
ID = 10 mA, f = 60 MHz
Note: Marking is “ZP–”
3
HITACHI [ HITACHI SEMICONDUCTOR ]
