3SK298
S Parameter (VDS = 6 V, VG2S = 3 V, ID = 10 mA, ZO = 50 )
Freq.
(MHz)
50
S11
S21
S12
S22
MAG.
0.994
0.993
0.986
0.980
0.973
0.950
0.936
0.924
0.912
0.893
0.874
0.859
0.846
0.829
0.810
0.802
0.791
0.778
0.756
0.751
ANG.
–5.8
MAG.
2.04
2.02
2.00
1.98
1.94
1.90
1.86
1.83
1.77
1.71
1.67
1.64
1.58
1.50
1.46
1.44
1.38
1.34
1.30
1.26
ANG.
173.6
167.4
161.5
155.5
149.6
142.6
137.1
131.6
126.8
121.0
115.5
111.1
106.7
102.1
97.1
MAG.
ANG.
76.9
85.7
78.2
73.5
68.7
63.9
64.3
64.5
60.9
53.5
49.3
49.0
50.2
49.3
46.6
43.7
44.7
43.6
45.1
40.7
MAG.
0.993
0.993
0.991
0.990
0.987
0.985
0.982
0.979
0.975
0.971
0.967
0.964
0.960
0.955
0.952
0.948
0.944
0.940
0.935
0.932
ANG.
–2.2
0.00116
0.00132
0.00229
0.00313
0.00427
0.00473
0.00536
0.00561
0.00562
0.00640
0.00638
0.00647
0.00667
0.00694
0.00661
0.00618
0.00622
0.00615
0.00576
0.00562
100
150
200
250
300
350
400
450
500
550
600
650
700
750
800
850
900
950
1000
–11.0
–16.8
–22.5
–27.8
–33.0
–38.3
–43.4
–48.0
–52.5
–57.3
–62.0
–66.1
–69.8
–74.2
–78.0
–81.6
–84.6
–88.5
–92.2
–4.5
–6.4
–8.5
–10.5
–12.5
–14.4
–16.2
–18.2
–20.2
–22.0
–23.9
–25.8
–27.6
–29.4
–31.2
–33.2
–35.1
–36.8
–38.5
92.7
88.9
84.2
80.2
75.9
9
HITACHI [ HITACHI SEMICONDUCTOR ]
