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3SK298 参数 Datasheet PDF下载

3SK298图片预览
型号: 3SK298
PDF下载: 下载PDF文件 查看货源
内容描述: 硅N沟道双栅MOS FET [Silicon N-Channel Dual Gate MOS FET]
分类和应用: 晶体小信号场效应晶体管射频小信号场效应晶体管光电二极管放大器
文件页数/大小: 11 页 / 57 K
品牌: HITACHI [ HITACHI SEMICONDUCTOR ]
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3SK298  
S11 Parameter vs. Frequency  
S21 Parameter vs. Frequency  
Scale: 0.5 / div.  
1
90°  
.8  
1.5  
60°  
.6  
120°  
2
.4  
3
30°  
4
150°  
.2  
5
10  
.2  
.4 .6 .8 1.0 1.5 2 3 4 5 10  
0
180°  
0°  
–10  
–5  
–4  
–.2  
–30°  
–150°  
–3  
–.4  
–2  
–60°  
–120°  
–.6  
–1.5  
–.8  
–90°  
–1  
Condition:  
V
= 6 V , V  
= 3 V  
Condition:  
V
= 6 V , V  
= 3 V  
G2S  
DS  
G2S  
DS  
I
= 10 mA , Zo = 50  
I
= 10 mA , Zo = 50 Ω  
D
D
50 to 1000 MHz (50 MHz step)  
50 to 1000 MHz (50 MHz step)  
S12 Parameter vs. Frequency  
S22 Parameter vs. Frequency  
Scale: 0.002 / div.  
1
90°  
.8  
1.5  
60°  
.6  
120°  
2
.4  
3
30°  
150°  
4
.2  
5
10  
.2  
.4 .6 .8 1.0 1.5 2 3 4 5 10  
0
180°  
0°  
–10  
–5  
–4  
–.2  
–30°  
–150°  
–3  
–.4  
–2  
–60°  
–120°  
–.6  
–1.5  
–.8  
–90°  
–1  
Condition:  
V
= 6 V , V  
= 3 V  
Condition:  
V
= 6 V , V  
= 3 V  
G2S  
DS  
G2S  
DS  
I
= 10 mA , Zo = 50 Ω  
I
= 10 mA , Zo = 50 Ω  
D
D
50 to 1000 MHz (50 MHz step)  
50 to 1000 MHz (50 MHz step)  
8