ELECTRICAL CHARACTERISTICS
STATIC ELECTRICAL CHARACTERISTICS
Table 3. Static Electrical Characteristics
Characteristics noted under conditions of 3.0V ≤ VDD ≤ 5.5V, 9.0V ≤ VPWR ≤ 18V, -40°C ≤ TC ≤ 125°C, and calibrated timers,
unless otherwise noted. Where typical values reflect the parameter’s approx. average value with VPWR = 13V, TA = 25°C.
Characteristic
DIGITAL INTERFACE (CONTINUED)
OUT_EN Leakage Current to VDD
OUT_EN = 5.0V, V = 0V
Symbol
Min
Typ
Max
Unit
I
µA
µA
OUT_EN(LKG)
–
5
–
50
25
DD
SCLK Pull-down Current
I
SCLK
VSCLK = V
DD
15
Tri-state SO Output
0V to 5.0V
I
µA
µA
TRISO
-10
-10
–
–
10
10
CS Input Current
CS = VDD
I
CS
CS Pull-up Current
CS = 0V
I
µA
µA
CS_PU
-30
-50
-100
CS Leakage Current to VDD
CS = 5.0V, V = 0V
I
CS(LKG)
–
–
–
50
–
DD
SO Input Capacitance in Tri-state Mode
SO High State Output Voltage
C
20
pF
V
SO
V
SO_HIGH
I
= -1.0mA
V
- 0.4
–
–
–
SO-HIGH
DD
SO Low State Output Voltage
= 1.0mA
V
V
µA
V
SO_LOW
I
–
0.4
100
SO-LOW
NOMI, MAXI in V10 Mode Pull-down Current
NOMI, MAXI = 0.8V V = 5.0V
I
PD
30
70
,
DD
SPKDUR Output Voltage
V
SPKDUR_LO
I
= 1.0mA
–
–
0.4
SPKDUR
Output Pull-up Current for SPKDUR
I
30
50
100
µA
SPKDUR_PV
NOMI, MAXI High State Output Voltage
V
V
I_HIGH
I
I
= -1.0mA
= -1.0mA
V
- 0.4
–
–
–
NOMI-HIGH
MAXI-HIGH
DD
NOMI, MAXI Low State Output Voltage
V
V
I_LOW
I
I
= 250µA
= 250µA
–
0.4
NOMI-LOW
MAXI-LOW
33810
Analog Integrated Circuit Device Data
Freescale Semiconductor
9
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