Freescale Semiconductor, Inc.
FLASH 2TS Memory
FLASH 2TS Program/Margin Read Operation
The embedded smart programming algorithm uses this step-by-step
sequence to program the data into the FLASH memory. The algorithm
optimizes the time required to program each page. Refer to 4.10
Embedded Program/Erase Routines for information on utilizing
embedded routines.
1. Set the FDIV bits. These bits determine the charge pump
frequency.
2. Set PGM = 1. This configures the memory for program operation
and enables the latching of address and data for programming.
3. Read the FLASH 2TS block protect register (FLBPR).
4. Write data to the one byte being programmed.
5. Set HVEN = 1.
6. Wait for a time, t
7. Set HVEN = 0.
8. Wait for a time, t
.
Step
.
HVTV
9. Set MARGIN = 1.
10. Wait for a time, t
11. Set PGM = 0.
.
VTP
12. Wait for a time, t
.
HVD
13. Read back data in margin read mode. This read operation is
stretched by eight cycles.
14. Clear the MARGIN bit. If the margin read data is identical to
write data, the program operation is complete; otherwise, jump to
step 2.
NOTE: While these operations must be performed in the order shown, other
unrelated operations may occur between the steps.
The smart programming algorithm guarantees the minimum possible
program time.
MC68HC908RFRK2
MOTOROLA
AdvanceInformation
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FLASH 2TS Memory
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