Freescale Semiconductor, Inc.
FLASH 2TS Memory
BLK1 — Block Erase Control Bit
This read/write bit together with BLK0 allows erasing of blocks of
varying size. See 4.6 FLASH 2TS Erase Operation for a description
of available block sizes.
BLK0 — Block Erase Control Bit
This read/write bit together with BLK1 allows erasing of blocks of
varying size. See 4.6 FLASH 2TS Erase Operation for a description
of available block sizes.
HVEN — High-Voltage Enable Bit
This read/write bit enables the charge pump to drive high voltages for
program and erase operations in the array. HVEN can be set only if
either PGM = 1 or ERASE = 1 and the proper sequence for smart
programming or erase is followed.
1 = High voltage enabled to array and charge pump on
0 = High voltage disabled to array and charge pump off
MARGIN — Margin Read Control Bit
This read/write bit configures the memory for margin read operation.
MARGIN cannot be set if the HVEN = 1. MARGIN will automatically
return to unset (0) if asserted when HVEN = 1.
1 = Margin read operation selected
0 = Margin read operation unselected
ERASE — Erase Control Bit
This read/write bit configures the memory for erase operation.
ERASE is interlocked with the PGM bit such that both bits cannot be
set at the same time.
1 = Erase operation selected
0 = Erase operation unselected
PGM — Program Control Bit
This read/write bit configures the memory for program operation.
PGM is interlocked with the ERASE bit such that both bits cannot be
set at the same time.
1 = Program operation selected
0 = Program operation unselected
Advance Information
46
MC68HC908RFRK2
FLASH 2TS Memory
MOTOROLA
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